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Resonant thermal infrared sensor and preparation method thereof

A thermal infrared, sensor technology, applied in the field of sensors, can solve problems such as low sensitivity, low quality factor, and lower resonance frequency

Active Publication Date: 2021-04-27
武汉敏声新技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current resonant thermal infrared sensor is affected by the loss of the anchor point, and its quality factor is low. In addition, it is restricted by the thermal conductivity of the support beam, which suppresses the temperature rise of the resonant oscillator and reduces the change of the resonant frequency, resulting in poor sensitivity. high

Method used

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  • Resonant thermal infrared sensor and preparation method thereof
  • Resonant thermal infrared sensor and preparation method thereof
  • Resonant thermal infrared sensor and preparation method thereof

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Effect test

Embodiment 1

[0068] For the resonant thermal infrared sensor structure whose drive and detection mode is electrostatic drive-capacitance detection, the resonant oscillator is manufactured using micromachining technology. The whole processing process includes:

[0069]1) Prepare a silicon-on-insulator CSOI (Cavity-Silicon-on Insulator, CSOI) substrate with a cavity, and the device layer of the CSOI is P-type heavily doped single crystal silicon;

[0070] 2) Pattern the device and the phononic crystal region by photolithography, and prepare a three-dimensional porous silicon structure in the phononic crystal region using an electrochemical corrosion process. The characteristic size of porous silicon is the characteristic size of the second phononic crystal structure;

[0071] 3) By thermal oxidation or low pressure chemical vapor deposition (Low pressure chemical vapor deposition, LPCVD) process to grow 0.2-1 μm thick silicon oxide on the CSOI substrate, or use LPCVD process to grow 0.2-1 μm...

Embodiment 2

[0074] For the resonant thermal infrared sensor structure whose drive and detection mode is piezoelectric drive-piezoelectric detection, the micromachining process is used to make it. The whole processing process includes:

[0075] 1) Prepare a silicon-on-insulator CSOI (Cavity-Silicon-on Insulator, CSOI) substrate with a cavity, and the device layer of the CSOI is P-type heavily doped single crystal silicon;

[0076] 2) Pattern the device and the phononic crystal region by photolithography, and prepare a three-dimensional porous silicon structure in the phononic crystal region using an electrochemical corrosion process. The characteristic size of porous silicon is the characteristic size of the second phononic crystal structure;

[0077] 3) Growing electrode / AlN / electrode piezoelectric stacks on the CSOI substrate device layer silicon by sputtering, and using patterned photolithography and etching techniques to etch to leave a patterned structure as a piezoelectric stack;

...

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Abstract

The invention discloses a resonant thermal infrared sensor and a preparation method thereof, and particularly relates to a resonant thermal infrared sensor with a composite phononic crystal structure supporting beam and a preparation method of the resonant thermal infrared sensor. Various acoustic forbidden bands contained in the composite phonon crystal structure are mainly utilized, phonon forbidden bands can be generated in the working frequency band of the resonant thermal infrared sensor to reduce anchor point loss of a resonant oscillator, the quality factor (Q) of the resonant thermal infrared sensor is improved, thermo-phonon forbidden bands can be generated in the thermo-phonon frequency band, heat loss is reduced, and the sensitivity and the resolution of the resonant thermal infrared sensor are improved.

Description

technical field [0001] The invention belongs to the technical field of sensors, and in particular relates to a resonant thermal infrared sensor and a preparation method thereof. Background technique [0002] Infrared sensors are mainly divided into photon detection and thermal detection infrared sensors according to different working principles. Photon detection infrared sensors mainly use the photoelectric effect of certain materials. Infrared photons excite bound state electrons in materials into conduction electrons, which change the electrical parameters of materials, resulting in changes in electrical signals. Its response speed is fast, but it generally needs to be carried out at low temperature, and the preparation of photosensitive materials is relatively difficult. Thermal detection infrared sensors mainly cause temperature rise through the thermal effect of infrared radiation, resulting in changes in temperature-related physical properties. Compared with photon d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/58G01J5/22G01J5/20G01J5/34B81B7/02B81C1/00
CPCG01J5/58G01J5/22G01J5/20G01J5/34B81B7/02B81C1/00134B81B2201/02B81B2201/0207
Inventor 吴国强韩金钊吴忠烨
Owner 武汉敏声新技术有限公司
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