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Preparation method of low-temperature-resistant stretchable solid-liquid double-phase CuGa2-GaInSn conductive thin film

A conductive film, cuga2-gainsn technology, applied in ion implantation plating, metal material coating process, coating and other directions, to achieve excellent application prospects, improve low temperature phase stability, reduce the effect of solidification temperature

Active Publication Date: 2021-06-01
DONGGUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the surface tension (γ) of GaIn and GaInSn are as high as 624mN m -1 and 534mN m -1 , leading to the inability to obtain low freezing point GaIn or GaInSn as a liquid phase solid-liquid dual-phase conductive film by blending

Method used

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  • Preparation method of low-temperature-resistant stretchable solid-liquid double-phase CuGa2-GaInSn conductive thin film
  • Preparation method of low-temperature-resistant stretchable solid-liquid double-phase CuGa2-GaInSn conductive thin film
  • Preparation method of low-temperature-resistant stretchable solid-liquid double-phase CuGa2-GaInSn conductive thin film

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Embodiment

[0024] A Stretchable Solid-liquid Dual Phase CuGa with Low Temperature Resistance 2 -The preparation method of GaInSn conductive thin film, comprises following preparation steps:

[0025] (1) Use a flexible high temperature resistant (stable at 250°C) polymer film as the substrate, such as silicone rubber (PDMS), polyimide (PI), and use plasma treatment and surface mercaptolation on the substrate ,stand-by.

[0026] (2) The substrate obtained in step (1) is cleaned by deionized water, and put into the chamber of the vacuum coating machine, and copper (Cu) (purity: 99.9%-99.9999%) is put into the resistance of the vacuum coating machine in the evaporation tank.

[0027] (3) Close the chamber door of the vacuum coating machine, evacuate the chamber of the vacuum coating machine, and reduce the vacuum degree to 4×10 - 6 mbar.

[0028] (4) Regulate the current (A) of the thermal evaporation tank to uniformly deposit Cu atoms on the substrate, and obtain a Cu thin film on the su...

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Abstract

The invention provides a preparation method of a low-temperature-resistant stretchable solid-liquid double-phase CuGa2-GaInSn conductive film. According to the method, thermal evaporation is innovatively conducted on a copper (Cu) atomic layer and a gallium (Ga) atomic layer on a substrate, subjected to plasma and sulfhydrylation treatment, in sequence, and then indium (In) and tin (Sn) are placed in an evaporation tank of a vacuum coating machine at the same time. The indium (In) and the tin (Sn) are evaporated at the upper end of the gallium (Ga) atomic layer at the same time through a co-thermal evaporation process, Cu and Ga are subjected to vacuum heating treatment to react to form solid-phase CuGa2, Ga, In and Sn are alloyed to form liquid-phase GaInSn resistant to the low temperature of -19 DEG C, and finally the CuGa2-GaInSn solid-liquid double-phase conductive thin film is prepared. According to the method, liquid phase Ga is doped with In and Sn atoms, the solidification temperature of a liquid phase is effectively lowered, and the low-temperature phase stability of the solid-liquid thin film is improved; meanwhile, Cu is adopted to replace expensive Au to serve as a solid phase active point, and the preparation cost is reduced; and the CuGa2-GaInSn solid-liquid double-phase conductive thin film prepared through the method can be applied to stretchable conductive components and has very excellent application prospects.

Description

technical field [0001] The invention relates to the technical field of advanced electronic materials, in particular to a low temperature resistant stretchable solid-liquid dual phase CuGa 2 -Preparation method of GaInSn conductive thin film. Background technique [0002] Currently, Gallium based-Liquid Metal (Ga-LM) combines electricity (electrical conductivity: 3.4-6.7×104S / cm), heat (thermal conductivity: 16.5-29.3W / m K), mechanical and Fluid characteristics, and has low toxicity safety and high stability. The Young's modulus of Ga-LM is 5-6 orders of magnitude lower than that of commonly used polymer substrates, and 10-12 orders of magnitude lower than that of common metal and carbon materials, and it can still maintain stable electrical conductivity when stretched to 700%. Its strain-conductance stability has been significantly improved compared with traditional metals, making it one of the most attractive materials for fabricating stretchable conductive elements. Stu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/24C23C14/20C23C14/54C23C14/58
CPCC23C14/24C23C14/5806C23C14/20C23C14/54
Inventor 巫运辉吴文剑詹杰荣
Owner DONGGUAN UNIV OF TECH
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