Terahertz band-pass filter structure unit and continuous modulation method
A band-pass filter and structural unit technology, which is applied in the field of terahertz communication, can solve the problems of low response peak quality factor, single response frequency, and difficulty in dynamic continuous control of response frequency, so as to improve the quality factor and realize continuous adjustable Effect
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Embodiment approach 1
[0037] refer to figure 1 and figure 2 , a terahertz bandpass filter structural unit, including an upper metal 1, a dielectric layer 2 and a lower metal 3, the upper metal 1, the dielectric layer 2 and the lower metal 3 are stacked in sequence, the upper metal 1, the dielectric layer 2 and the lower metal The central points of 3 are all located on the same axis, the lower metal 3 is provided with a hollow hole 31, the upper metal 1 is located in the hollow 31, and the upper metal 1 and the lower metal 3 form a complementary structure.
[0038]Due to the fixed structure of the terahertz response filter prepared by using planar metal array metamaterials, the dynamic regulation of the frequency cannot be realized, and the response frequency of the terahertz metamaterial is strongly restricted by the size of the unit structure. The terahertz metamaterial filter based on the fixed structural unit , it is very difficult to realize the dynamic and continuous control of the response ...
Embodiment approach 2
[0051] The difference from Embodiment 1 is that in this embodiment, the thickness of the upper metal 1 and the lower metal 3 are 20 nanometers, and the thickness of the dielectric layer 2 is 6 microns. see Figure 7 As shown, the upper metal 1 and the lower metal 3 are both square.
[0052] Other structures are the same as those in Embodiment 1, and will not be repeated here.
Embodiment approach 3
[0054] The difference from Embodiment 1 is that the materials of the upper metal 1 and the lower metal 3 in this embodiment are the same, the upper metal 1 and the lower metal 3 are gold, silver, aluminum, copper or iron, and the dielectric layer 2 is aluminum oxide, hafnium oxide or silicon carbide. The materials of the upper metal 1 and the lower metal 3 may be the same or different.
[0055] Other structures are the same as those in Embodiment 1, and will not be repeated here.
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