Complex-surface thin film transistor and self-aligned electrofluid conformal photoetching manufacturing method

Abstract

The invention belongs to the related technical field of preparation of organic thin film transistors, and discloses a complex-surface thin film transistor and a self-aligned electrofluid conformal photoetching manufacturing method. The method comprises the following steps of: (1) preparing a bottom gate electrode, a bottom gate dielectric layer and a semiconductor layer on a curved-surface substrate in sequence; (2) preparing a fiber mask on the semiconductor layer by adopting an electrofluid jet printing process, wherein when electrofluid jet printing is carried out, a space electric field is influenced by the curved-surface substrate to cause spatial distribution distortion, so generated jet flow and fibers are deposited on a normal shortest site of the curved-surface substrate, and then normal curved-surface self-alignment is realized; (3) preparing a source electrode, a drain electrode and a lead on the semiconductor layer by adopting a fiber mask, and automatically generating a channel due to height difference at the position of the fiber mask; and (4) heating the fiber mask to enable the fiber mask to be converted into a molten state, and then realizing self-aligned packaging, thereby completing manufacturing. According to the invention, in-situ preparation and self-packaging of the thin film transistor on the curved-surface substrate are realized through an electrofluid jet printing self-alignment process.

Description

technical field [0001] The invention belongs to the technical field related to the preparation of organic thin film transistors, and more specifically, relates to a complex curved surface thin film transistor and a self-aligned electrofluid conformal lithography manufacturing method, in particular to an organic thin film with small channels on a complex curved surface substrate Transistor Self-Aligned Electrofluidic Conformal Lithographic Fabrication Method. Background technique [0002] Organic thin-film transistor (OTFT) is the key driving electronic component of the next-generation display technology and multi-functional sensor in the future. The channel length (L) of its key feature structure has micro-nano dimensions. The current preparation process relies heavily on traditional lithography technology. Traditional lithography technology relies heavily on the manufacturing accuracy of the mask, the chemical properties of the photoresist, and the wavelength of the light s...

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Problems solved by technology

However, both of the above two processes are circular cross-section fibers formed on a flat substrate with the aid of a liquid environment, and none of the above methods can achieve fiber masking on a curved substrate.

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