Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Shape-controllable silicon dioxide nano array and preparation method and application thereof

A silicon dioxide and nanoarray technology, applied in the field of nanomaterials, can solve the problems of complex processing process and difficult to control surface structure, etc.

Active Publication Date: 2021-06-11
FUDAN UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The nano-biological interaction is affected by the surface structure of the substrate, but some existing methods (such as chemical etching process, electrochemical deposition, chemical vapor deposition), the processing process is often complicated, and it is difficult to precisely control the surface structure at the nanoscale

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Shape-controllable silicon dioxide nano array and preparation method and application thereof
  • Shape-controllable silicon dioxide nano array and preparation method and application thereof
  • Shape-controllable silicon dioxide nano array and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Growth of silica nanoarrays on silicon wafers:

[0055] (1) Dissolve 0.5 wt.% cetyltrimethylammonium bromide (CTAB) and 0.008 wt.% sodium hydroxide in water in turn to obtain a clear solution, and control the temperature at 60 °C;

[0056] (2) Add silicon wafers and continue to stir at 60 °C;

[0057] (3) Add a mixed solution of cyclohexane and tetraethylorthosilicate (TEOS), and control the volume ratio of cyclohexane, TEOS and water to 6: 1.5: 10;

[0058] (4) Control the temperature at 60 °C and react for 48 h;

[0059] (5) After the reaction is over, take out the silicon wafer and wash it.

[0060] The silicon dioxide nanoarray layer grown on the silicon wafer was obtained, and the distribution density of the silicon dioxide nanoarray (spine) was 510 nanothorns / μm 2 , the average distance between adjacent silica nanopeaks is 46 nm. like Figure 4 , Figure 5 shown.

Embodiment 2

[0062] Growth of silica nanoarrays on glass rods:

[0063] (1) Dissolve 2 wt.% cetyltrimethylammonium bromide (CTAB) and 0.01 wt.% sodium hydroxide in water in turn to obtain a clear solution, and control the temperature at 60 °C;

[0064] (2) Add a glass rod and continue stirring at 60 °C;

[0065] (3) Add a mixed solution of cyclohexane and tetraethylorthosilicate (TEOS), and control the volume ratio of cyclohexane, TEOS and water to 6: 1.5: 10;

[0066] (4) Control the temperature at 60 °C and react for 48 h;

[0067] (5) After the reaction, the glass rod was taken out and washed to obtain a silicon dioxide nano-array layer grown on the glass rod. like Figure 6 , Figure 7 shown.

Embodiment 3

[0069] Growth of silica nanoarrays on glass tubes:

[0070] (1) Dissolve 2 wt.% cetyltrimethylammonium bromide (CTAB) and 0.01 wt.% sodium hydroxide in water in turn to obtain a clear solution, and control the temperature at 60 °C;

[0071] (2) Add the glass tube and continue stirring at 60 °C;

[0072] (3) Add a mixed solution of cyclohexane and tetraethylorthosilicate (TEOS), and control the volume ratio of cyclohexane, TEOS and water to 6: 1.5: 10;

[0073] (4) Control the temperature at 60 °C and react for 48 h;

[0074] (5) After the reaction, the glass tube was taken out and washed to obtain a silicon dioxide nano-array layer grown on the glass tube. like Figure 8 , Figure 9 shown.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
thicknessaaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of nano materials, and particularly relates to a shape-controllable silicon dioxide nano array and a preparation method and application thereof. According to the silicon dioxide nano array, the array height is 8-46 nm, and the distribution density is 210-3100 / mu m < 2 >. The preparation method of the nano array comprises the following steps: forming a silicon nano array on the surface of a substrate by adopting an oil / water double-phase single micelle epitaxial growth method and taking CTAB as a structure-directing agent, TEOS as a precursor and NaOH as a catalyst; the substrate can be a glass sheet, a silicon wafer, a glass rod, a glass tube, a micro-fluidic chip and the like. The silicon dioxide nano array can endow the substrate with a rough surface structure, and the interaction between the substrate and tumor cells and the biological interface is enhanced. Compared with a substrate modified by a smooth silicon layer, the cell adhesion capacity is remarkably improved. The device formed by nesting the glass rod with the silicon dioxide nano array growing on the surface and the glass tube can be used for separating tumor cells from whole blood.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a silicon dioxide nanoarray with controllable shape, its preparation method and application. Background technique [0002] The nano-biological interaction is affected by the surface structure of the substrate, but some existing methods (such as chemical etching process, electrochemical deposition, chemical vapor deposition), the processing process is often complicated, and it is difficult to precisely control the surface structure at the nanoscale . [0003] Compared with smooth interfaces, substrates with nanotopographic interfaces, such as nanoarrays, nanofibers, etc., interact with cells differently. Previous studies have shown that surface nanostructures can significantly increase the contact frequency between substrates and cells (such as nano-scale microvilli, filopodia, surface receptors, etc.), thereby improving the adhesion efficiency of cells. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/65C03C17/25C12M1/00
CPCC04B41/5035C04B41/65C04B41/009C03C17/25C12M23/08C03C2217/213C03C2218/111C03C2218/32C04B14/06C04B41/4554
Inventor 李晓民王文兴于泓跃陈良
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com