Electron beam lithography machine

Abstract

The invention relates to an electron beam lithography machine which comprises a vacuum device, a supporting frame, a photoelectric cathode plate, a light and light beam guide device, a first light source, a second light source, an electromagnetic lens and a silicon wafer bearing table. The upper opening of a light beam guide cavity is covered by the photoelectric cathode plate, a first light guiding and receiving cavity and a second light guiding and receiving cavity are arranged at the two sides of the light beam guiding cavity and are close to the upper opening, and the first light source and the second light source are correspondingly installed in the first light guiding and receiving cavity and the second light guiding and receiving cavity. The light emitted by the first light source and the second light source irradiates the photoelectric cathode plate, and the light reflected from the photoelectric cathode plate correspondingly enters the second light guiding and receiving cavity and the first light guiding and receiving cavity, so that the reflected light is guided into the light guiding and receiving cavity at the opposite side, the reflected light on the photoelectric cathode plate cannot be reflected to a silicon wafer on a workbench, and harmful exposure caused by the reflected light of the photoelectric cathode plate on the photoresist can be effectively prevented.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit etching, in particular to an electron beam lithography machine. Background technique [0002] Traditional lithography machines use light to make integrated circuits. Since light waves are relatively long, making integrated circuits requires a very thin circuit width, so using various light sources for lithography machines cannot meet the actual needs of VLSI. For this problem, the usual approach is to use ultraviolet light sources with shorter light waves, but limited by light waves, the manufacture of ultra-fine integrated circuits still cannot meet actual needs. [0003] Aiming at the shortcomings of the existing technology, the Chinese invention patent application with the patent application number 202010964981.7 and the name of the electron beam semiconductor lithography machine provides a corresponding solution: please also refer to figure 1 , consisting of an electr...

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Problems solved by technology

[0004] However, the above-mentioned prior art has the following technical problems: the platform light source is blocked by the silicon wafer, which affects the uniform irradiation of the light on the mask, if the platform light source is too strong, the photoresist on the silicon wafer will be exposed harmfully, and the platform light source is too weak to Generate enough electron beams, this contradiction is difficult to balance

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