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Infrared detector array and manufacturing method thereof

The technology of an infrared detector and a manufacturing method, which is applied in the field of infrared detection, can solve problems such as the performance degradation of an infrared detector array and the inconsistent working voltage of pixels at different positions, so as to improve the consistency of working bias voltage, avoid the parasitic effect of resistance, and reduce the Effect of Routing Difficulty

Active Publication Date: 2021-06-18
北京智创芯源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an infrared detector array and its manufacturing method, so as to solve the problem in the prior art that the operating voltages of the pixels at different positions are not consistent, resulting in a decrease in the performance of the infrared detector array

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  • Infrared detector array and manufacturing method thereof
  • Infrared detector array and manufacturing method thereof
  • Infrared detector array and manufacturing method thereof

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specific Embodiment approach 4

[0068] The present invention also provides a method for manufacturing an infrared detector array, and a schematic flow chart of a specific implementation thereof is as follows: Figure 4 As shown, it is referred to as the fourth specific embodiment, including:

[0069] S101 : disposing a first passivation layer 300 on the p-type substrate 100 .

[0070] S102: Photolithographically pattern the implantation region on the surface of the first passivation layer 300, and perform an implantation process to obtain the n-type pixel layer 200 on the surface of the p-type substrate 100 close to the surface of the first passivation layer 300; Wherein, the n-type pixel layer 200 includes a plurality of n-type doped regions arranged at intervals in a preset two-dimensional pattern.

[0071] S103: sequentially arrange the first metal contact layer 400, the second passivation layer 500 and the second metal contact layer 600 on the surface of the first passivation layer 300 to obtain an infr...

specific Embodiment approach 3

[0072] Comparing with the third specific embodiment, connecting the first metal contact layer 400 to the p-type substrate 100 is more conducive to simplifying the process and improving the yield. Therefore, as a preferred embodiment, the first passivation The first metal contact layer 400, the second passivation layer 500 and the second metal contact layer 600 are sequentially arranged on the surface of the chemical layer 300, so that the infrared detector array includes:

[0073] A1: A p-type contact hole is provided in a region between adjacent n-type doped regions.

[0074] A2: The first metal contact layer 400 is disposed on the first passivation layer 300, and the p-type extension region of the first metal contact layer 400 is connected to the p-type base 100 through the p-type contact hole .

[0075] A3: The second passivation layer 500 is disposed on the first metal contact layer 400 .

[0076] A4: An n-type contact hole is provided in a region corresponding to the n-...

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Abstract

The invention discloses an infrared detector array which sequentially comprises a p-type substrate, an n-type pixel layer, a first passivation layer, a first metal contact layer, a second passivation layer and a second metal contact layer from bottom to top. The n-type pixel layer comprises a plurality of n-type doped regions which are arranged at intervals according to a preset two-dimensional pattern; one of the first metal contact layer and the second metal contact layer comprises an n-type extension region; the other one of the first metal contact layer and the second metal contact layer comprises a p-type extension region; the first metal contact layer and the second metal contact layer are arranged in a non-contact manner; the p-type extension region and the n-type extension region are used for providing a working voltage for a detection pixel; and the detection pixel is a pn junction formed by the p-type substrate and the n-type pixel layer. According to the invention, the working bias consistency between the detection pixels of a large-array-scale infrared detector is improved, and a space is saved. The invention further provides a manufacturing method of the infrared detector array with the advantages.

Description

technical field [0001] The invention relates to the field of infrared detection, in particular to an infrared detector array and a manufacturing method thereof. Background technique [0002] With the development of technology, infrared detectors are widely used in military and civil fields such as early warning detection, infrared reconnaissance, and imaging guidance. With the continuous advancement of infrared detector technology, the scale of the array is also increasing, from 1K×1K megapixels to 4K×4K tens of millions of pixels. [0003] In the ultra-large infrared detector array, the consistency of the working bias between the pixels will affect the detection performance of the infrared detector system. Taking the mercury cadmium telluride infrared detector array as an example to illustrate, the conventional mercury cadmium telluride infrared detector structure The photodiode (PN junction) is formed by planar injection, and all pixels have a common ground characteristic...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14603H01L27/14605H01L27/1462H01L27/14643H01L27/14683H01L27/14685
Inventor 不公告发明人
Owner 北京智创芯源科技有限公司