Silicon carbide single crystal growth control device and control method
A silicon carbide single crystal, growth control technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the difficulty of controlling the ratio of carbon source and silicon source, affecting the quality and purity of SiC crystal, low impurity content, etc. question
Pending Publication Date: 2021-06-25
广州爱思威科技股份有限公司
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Among them, the most important advantage of the HTCVD method is that because of the high purity of the special gas and low impurity content, it is conducive to the preparation of high-purity and high-quality semi-insulating silicon carbide crystals, but it is difficult to control the ratio of carbon and silicon sources in the reaction gas. Less silicon or more silicon and less carbon will form many defects in SiC crystals, which will affect the quality and purity of SiC crystals. The use of HTCVD to prepare SiC is therefore limited.
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[0036] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0037] It should be noted that if there is a directional indication (such as up, down, left, right, front, back...) in the embodiment of the present invention, the directional indication is only used to explain the position in a certain posture (as shown in the accompanying drawing). If the specific posture changes, the directional indication will also change accordingly.
[0038] In addition, if there are descriptions involving "first", "second" and ...
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The invention provides a silicon carbide single crystal growth control device. The silicon carbide single crystal growth control device comprises a shell, a heating device, a silicon source gas pipeline and a carbon source gas pipeline. A reaction chamber is formed in the shell, and a silicon carbide seed crystal placing position is arranged in the reaction chamber. The heating device is arranged on the shell and is used for controlling the internal temperature of the reaction chamber. The silicon source gas pipeline is used for introducing silicon source gas into the reaction chamber, and the carbon source gas pipeline is used for introducing carbon source gas into the reaction chamber. The silicon source gas pipeline is provided with a first mass flow controller which is used for monitoring and controlling the flow of the silicon source gas. The carbon source gas pipeline is provided with a second mass flow controller which is used for monitoring and controlling the flow of the carbon source gas. The invention also provides a silicon carbide single crystal growth control method. The ratio of the flow of the silicon source gas to the flow of the carbon source gas can be adjusted and controlled to enable the ratio of Si in the silicon source gas to C in the carbon source gas in the reaction chamber to be 1: 1, so that a high-purity and high-quality SiC single crystal can be prepared.
Description
technical field [0001] The invention relates to the technical field of silicon carbide preparation, in particular to a silicon carbide single crystal growth control device and control method. Background technique [0002] Silicon carbide material (SiC) has many advantages: wide band gap, good thermal conductivity, high breakdown electric field, high electron saturation rate, good thermal stability, and strong chemical stability. SiC has a large band gap, which is suitable for the development of short-wave optoelectronic devices; good thermal conductivity, which is conducive to the operation of SiC-based devices at high temperatures; high electron saturation rate, suitable for manufacturing high-frequency devices; high breakdown electric field, which is conducive to the manufacture of high-power Device; strong chemical stability, the device can work in a corrosive environment. Therefore, high-quality SiC crystals / wafers can be said to be the core foundation of the SiC semico...
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IPC IPC(8): C30B25/16C30B25/14C30B29/36
CPCC30B25/16C30B25/14C30B29/36
Inventor林大野王治中蔡钦铭
Owner广州爱思威科技股份有限公司