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Power discrete device and control method thereof

A discrete device and control method technology, applied in the field of power electronics, can solve the problems of large total loss and MOSFET not suitable for high-power scenarios, and achieve the effects of reducing total loss, reducing application costs, and improving utilization

Pending Publication Date: 2021-06-25
SUNGROW POWER SUPPLY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, MOSFETs are not suitable for high-power scenarios, so that regardless of the use of anti-parallel diode IGBTs or MOSFETs, the total loss of the anti-parallel diode IGBT or MOSFET is relatively large

Method used

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Embodiment Construction

[0050] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0051] In this application, the term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus comprising a set of elements includes not only those elements, but also includes none. other elements specifically listed, or also include elements inheren...

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Abstract

The invention provides a power discrete device and a control method thereof, the power discrete device makes full use of limited pins and area of the discrete device, and two different types of controllable semiconductor chips are sealed in the power discrete device through at least one connection point between the two different types of controllable semiconductor chips, so that the diode of a silicon-based semiconductor device may be omitted. A control port obtained after packaging is used for realizing on-off driving of the corresponding controllable semiconductor chip, so that main power current of the power discrete device flows through the corresponding power flow port and the corresponding controllable semiconductor chip; moreover, different types of controllable semiconductor chips are different in performance, and appropriate controllable semiconductor chips can be selected to bear corresponding loss according to the current practical application scene, so that the total loss of the power discrete device is reduced; that is, by controlling the on and off of the two types of chips, the overall working loss is reduced, the utilization rate is improved, and the cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of power electronics, and more specifically, relates to a power discrete device and a control method thereof. Background technique [0002] Both IGBT (insulated Gate Bipolar Transistor, insulated gate bipolar transistor) and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, metal-oxide-semiconductor field-effect transistor) are controllable semiconductor high-speed switches, and their response speed is higher than that of relays. Therefore, it is widely used in various circuit structures. [0003] Among them, since the IGBT is a bipolar device, it cannot realize bidirectional current conduction. When the voltage is reversed, an external reverse diode needs to be connected in parallel; in this way, the current can flow through the diode when bidirectional conduction is required. But this requires the simultaneous use of two devices, the IGBT and the diode, to achieve the above functions. The MOSFET...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/16
CPCH03K17/16
Inventor 陈鹏
Owner SUNGROW POWER SUPPLY CO LTD