Method for manufacturing modified electrically-conductive copper particles and modified electrically-conductive copper particles manufactured thereof
A copper particle modification technology, applied in the direction of conductive materials, conductive materials, conductive materials, etc. dispersed in non-conductive inorganic materials, can solve the problem of not providing copper particles
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Embodiment 1
[0063] Embodiment 1——preparation of modified conductive copper particles
[0064] A) Manufacture of conductive copper particles Cu / Ni-P:
[0065] 30 g of copper powder with copper particles having an average diameter of 5 μm are introduced into a 1 liter water bath containing: 28 g of NiSO 4 ·7H 2 O, 21g of NaH 2 PO 2 ·H 2 O, 1×10 -6 mol of surfactant mixture. Next, the bath was heated to a temperature of 95°C. After forming the Ni-P coating on the surface of the Cu particles, the modified conductive copper particles were removed from the bath, rinsed with water and dried in an air atmosphere. The coating thickness measured by TEM was 4.5 nm.
[0066] B) Manufacture of conductive copper particles Cu / Ni-P-Ag:
[0067] Manufacturing contains 28g of NiSO 4 ·7H 2 O, 21g of NaH 2 PO 2 ·H 2 O, 1×10 -6 mol of surfactant mixture in a water bath. Introduction to the bath: 10 g of AgNO 3 and 30 g of copper powder with copper particles having an average diameter of 5 μm....
Embodiment 2
[0068] Embodiment 2——Preparation of solar cells
[0069] A series of silicon substrates for the fabrication of solar cells were prepared, each with a surface area of 5 × 5 cm. These plates are produced on the basis of Cz-Si p-type silicon (ie single crystal silicon obtained by the Czochralski process). Plate parameters: resistivity 1 Ωm, thickness of crystal orientation surface (100) 170 μm. After cleaning the surface of the plate in a chemical bath, on the surface of the plate, N 2 and O 2 POCl in atmosphere 3 source prepared a sheet resistance R of 50Ω / □ 片 emitter. In removal of HF:H 2 After the enamel silicon-phosphorous layer (PSG) in O (1:9 v / v) mixture, dry O on the plate 2 After performing the oxidation, SiO is formed within 10 minutes at a temperature of 830 °C 2 Floor. In SiO 2 layer, by (C 2 h 5 O) 4 Ti chemical vapor deposition, coated with TiO with a thickness of 80nm 2 anti-reflective layer. On the front side of the solar cell, a collector electro...
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