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Method for manufacturing modified electrically-conductive copper particles and modified electrically-conductive copper particles manufactured thereof

A copper particle modification technology, applied in the direction of conductive materials, conductive materials, conductive materials, etc. dispersed in non-conductive inorganic materials, can solve the problem of not providing copper particles

Active Publication Date: 2021-06-29
研究和技术发展中心
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method does not provide copper particles coated with a thin epitaxial layer

Method used

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  • Method for manufacturing modified electrically-conductive copper particles and modified electrically-conductive copper particles manufactured thereof
  • Method for manufacturing modified electrically-conductive copper particles and modified electrically-conductive copper particles manufactured thereof
  • Method for manufacturing modified electrically-conductive copper particles and modified electrically-conductive copper particles manufactured thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Embodiment 1——preparation of modified conductive copper particles

[0064] A) Manufacture of conductive copper particles Cu / Ni-P:

[0065] 30 g of copper powder with copper particles having an average diameter of 5 μm are introduced into a 1 liter water bath containing: 28 g of NiSO 4 ·7H 2 O, 21g of NaH 2 PO 2 ·H 2 O, 1×10 -6 mol of surfactant mixture. Next, the bath was heated to a temperature of 95°C. After forming the Ni-P coating on the surface of the Cu particles, the modified conductive copper particles were removed from the bath, rinsed with water and dried in an air atmosphere. The coating thickness measured by TEM was 4.5 nm.

[0066] B) Manufacture of conductive copper particles Cu / Ni-P-Ag:

[0067] Manufacturing contains 28g of NiSO 4 ·7H 2 O, 21g of NaH 2 PO 2 ·H 2 O, 1×10 -6 mol of surfactant mixture in a water bath. Introduction to the bath: 10 g of AgNO 3 and 30 g of copper powder with copper particles having an average diameter of 5 μm....

Embodiment 2

[0068] Embodiment 2——Preparation of solar cells

[0069] A series of silicon substrates for the fabrication of solar cells were prepared, each with a surface area of ​​5 × 5 cm. These plates are produced on the basis of Cz-Si p-type silicon (ie single crystal silicon obtained by the Czochralski process). Plate parameters: resistivity 1 Ωm, thickness of crystal orientation surface (100) 170 μm. After cleaning the surface of the plate in a chemical bath, on the surface of the plate, N 2 and O 2 POCl in atmosphere 3 source prepared a sheet resistance R of 50Ω / □ 片 emitter. In removal of HF:H 2 After the enamel silicon-phosphorous layer (PSG) in O (1:9 v / v) mixture, dry O on the plate 2 After performing the oxidation, SiO is formed within 10 minutes at a temperature of 830 °C 2 Floor. In SiO 2 layer, by (C 2 h 5 O) 4 Ti chemical vapor deposition, coated with TiO with a thickness of 80nm 2 anti-reflective layer. On the front side of the solar cell, a collector electro...

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Abstract

A method for manufacturing modified electrically-conductive copper particles, the method comprising the steps of: introducing copper particles of the average diameter of 0.5 to 20 [mu]m into a water bath, in the amount of 5-200 g of Cu particles per each liter of the water bath. The water bath comprising no complexing agents and no organic buffer agents, whereas the water bath comprising: at least one water-soluble metal salt comprising at least one metal cation selected from the metal cation group comprising nickel cation on the oxidation degree of +2 (Ni2+), wherein the metal cations concentration in the water bath is from 5*10-2 to 200*10-2 mol / dm3, at least one phosphoric reducing agent comprising phosphorus on the oxidation degree from +1 to +3, wherein the molar ratio of the metal cations to the phosphoric reducing agent in the water bath is from 0,1 to 2, at least one surfactant selected from the group of cationic, anionic and non-ionic surfactants. The method comprises heating the water bath with the copper particles to a temperature from 30 to 99 DEG C within the time necessary for forming, on the surface of the copper particles, an epitaxial metal layer of the thickness from 1 to 5 nm.

Description

technical field [0001] The present disclosure relates to a modified conductive copper particle with an epitaxial barrier coating and a method of making the same. [0002] The conductive copper particles according to the present disclosure ensure satisfactory electrical conductivity, therefore, the modified copper particles can be used as components of conductive compositions, for example, components of pastes, inks, paints, composite materials, especially with Conductive compositions for forming conductive paths and electrodes, especially for silicon-based solar cells. Background technique [0003] Conductive compositions (such as pastes, inks or coatings) are known which are suitable for printing conductive paths, electrodes, contacts or heaters, including conductors which are metals or metal alloys, in the form of layers, films or grids. [0004] In silicon-based solar cells, the conductive printing composition is used to form upper and lower electrodes that at least part...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/02H01B1/22B22F1/17
CPCH01B1/026H01B1/22B22F1/17B22F2301/10B22F2301/15B22F2302/45B22F2304/054H01L31/022425
Inventor 罗伯特·索哈彼得·帕内克格热戈日·普滕科夫斯基格热戈日·莫达尔斯基帕维尔·巴拉文德马乌戈热塔·穆斯蒂法加-斯塔舒克
Owner 研究和技术发展中心