High-performance silicon carbide semiconductor field effect transistor structure

Abstract

A high-performance silicon carbide semiconductor field effect transistor structure disclosed by the present invention comprises a field effect transistor body, the field effect transistor body comprises a field effect transistor base and a field effect transistor outer cavity, and the field effect transistor outer cavity is internally buckled on the top surface of the field effect transistor base. A plurality of groups of cabling racks are arranged between the field effect transistor base and the field effect transistor outer cavity, three rotating grooves are formed in one side of the field effect transistor base, first hinged shafts are arranged in the three rotating grooves respectively, and T-shaped connecting frames are rotationally connected to the first hinged shafts. The wiring board is provided with the wiring groove, and the wiring groove is arranged to be of a horn-shaped structure with a large left end opening and a small right end opening, so the wiring groove can achieve the integrated installation of a plurality of wires, enables the internal structure assembly of the field effect transistor body to be more reasonable, reduces the fault rate of the field effect transistor base body, and the service life of the field effect transistor base body is prolonged.

Description

technical field [0001] The invention belongs to the technical field of electronic components, in particular to a high-performance silicon carbide semiconductor field effect transistor structure. Background technique [0002] A transistor is a solid semiconductor device that can be used for detection, rectification, amplification, switching, voltage stabilization, signal modulation, and many other functions. The transistor acts as a variable switch that controls the outgoing current based on the input voltage. Therefore, transistors can be used as current switches. The difference from general mechanical switches (such as relay and switch) is that transistors are controlled by electrical signals, and the switching speed can be very fast. The switching speed in the laboratory can reach more than 100GHz. Strictly speaking, transistors generally refer to all single components based on semiconductor materials, including diodes, triodes, field effect transistors, thyristors, etc. m...

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Problems solved by technology

[0004] 1. The electrode hardness of the existing high-performance silicon carbide semiconductor field effect transistor structure is low, and it is easy to bend or break the electrode during use, resulting in damage to the high-performance silicon carbide semiconductor field effect transistor;

[0005] 2. During the use of the existing high-performance silicon carbide semiconductor field effect transistor structure, when a fault occurs inside the high-performance silicon carbide semiconductor field effect transistor structure, maintenance is inconvenient;

[0006] 3. The internal wiring of the existing high-performance silicon carbide semiconductor field effect transistor structure is not fixed, and the unreasonable wiring will cause the wires to be intertwined and entangled together, which is likely to cause damage to the structure of the high-performance silicon carbide semiconductor field effect transistor

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