Method for detecting quality of dielectric layer of micro-fluidic chip

Abstract

The invention discloses a method for detecting the quality of a dielectric layer of a micro-fluidic chip. The method comprises the following steps: S1, arranging a hydrophobic layer on the dielectric layer of the micro-fluidic chip; s2, arranging a conductive solution layer on the hydrophobic layer; and s3, conducting a power supply on the back electrode of the micro-fluidic chip and the conductive solution layer, and observing whether the dielectric layer has a defect phenomenon or not after loading voltage; wherein the defect phenomenon comprises at least one of bubble generation and color change of the conductive solution layer, electric spark generation of the dielectric layer and leakage current sudden increase; the hydrophobic layer is arranged on the dielectric layer, the conductive solution layer is arranged on the hydrophobic layer for electrifying detection of the to-be-tested electrode area, it is indicated that the dielectric layer has defects as long as at least one of bubble generation, color change, electric spark generation and leakage current sudden increase of the conductive solution layer occur in the testing process, and the method is easy to operate and high in detection efficiency; and large-area detection can be carried out.

Description

technical field [0001] The invention relates to the technical field of microfluidic chips, in particular to a method for detecting a defect in a dielectric layer of a microfluidic chip. Background technique [0002] Existing microfluidic chip dielectric layer defect detection mainly includes breakdown voltage method and optical microscope detection method: [0003] The former is to plate a certain thickness of dielectric layer on the conductive area of ​​the microfluidic chip to be protected by physical or chemical methods. According to the thickness of the dielectric material, the breakdown voltage of the dielectric material is estimated, and then the two ends of the chip are (One end is the conductive area, the other end is the dielectric area) respectively connected to the positive and negative poles of the power supply, input the estimated voltage, after a period of time, if there is a defect in the dielectric layer at this position, leakage breakdown will occur, through...

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Problems solved by technology

The instability of the process can easily cause defects such as pinholes, foreign matter, unevenness, and insufficient compactness in the dielectric

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