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A polarization-insensitive waveguide grating filter based on double-layer structure

A polarization-insensitive, waveguide grating technology, used in optical waveguides, instruments, light guides, etc., to achieve large tolerances, reduce the number and loss of devices, and reduce the size of devices

Active Publication Date: 2022-01-11
ZHEJIANG UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

Therefore, this design has important research significance for solving the polarization problem of silicon-based photonics

Method used

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  • A polarization-insensitive waveguide grating filter based on double-layer structure
  • A polarization-insensitive waveguide grating filter based on double-layer structure
  • A polarization-insensitive waveguide grating filter based on double-layer structure

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Embodiment Construction

[0035] The present invention will be further described below in conjunction with the accompanying drawings.

[0036] The polarization-insensitive waveguide grating filter based on the double-layer structure of the present invention includes a polarization-insensitive filter unit, and the polarization-insensitive filter unit includes a silicon waveguide apodized grating layer and a silicon nitride waveguide apodized grating layer, wherein TE signals are filtered by silicon waveguide apodized gratings and TM signals are filtered by silicon nitride apodized gratings

[0037] Such as figure 1 As shown, it is the first scheme of the present invention, its polarization-insensitive filter unit adopts a multimode waveguide filter, and the described waveguide grating filter includes an input single-mode waveguide 1, a dual polarization mode (de)multiplexer 2. Input tapered waveguide 3, polarization-insensitive multimode waveguide grating filter 4, metal electrode 5, output tapered wa...

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Abstract

The invention discloses a polarization-insensitive waveguide grating filter based on a double-layer structure; it includes a polarization-insensitive filter unit, and the polarization-insensitive filter unit includes a silicon waveguide apodized grating layer and a silicon nitride waveguide apodized A grating layer, where the TE signal is filtered by the silicon waveguide apodized grating and the TM signal is filtered by the silicon nitride apodized grating. The polarization-insensitive filter unit can be realized by using a multimode waveguide filter, or by a grating-assisted filter; the filter of the present invention can realize simultaneous filtering of TE mode and TM mode, and realize polarization-insensitive grating filter, and the device size can be effectively reduced by half compared to the traditional solution using a polarization rotator. In addition, the present invention is based on silicon-based and silicon nitride waveguide grating filters, with large tolerance and small insertion loss, and the central wavelength adjustment range is not limited by FSR, and filters with different bandwidths can be realized by setting different coupling coefficients.

Description

technical field [0001] The invention belongs to the technical field of grating filters, and mainly relates to silicon and silicon nitride waveguide grating filters, in particular to a polarization-insensitive waveguide grating filter based on a double-layer structure. Background technique [0002] In recent years, with the rapid development of integrated photonics, silicon-based integrated photonic devices have become an important research direction. In the field of silicon-based integrated photonic devices, silicon-based waveguide grating devices have attracted more and more attention. A large number of achievements have been made in the research on the theory, formation mechanism, manufacturing method and application of silicon-based waveguide gratings. It has the characteristics of simple structure, easy integration, and compatible manufacturing process with existing mature CMOS processes, and has broad application fields. With the maturity of the preparation process of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/124G02B6/12G02F1/01
CPCG02B6/124G02B6/12004G02B6/12002G02F1/0147G02F1/011G02B2006/12109
Inventor 余辉王肖飞江晓清杨建义
Owner ZHEJIANG UNIV
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