Manufacturing method of LED epitaxial wafer

A technology of LED epitaxial wafer and manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of low brightness of LED epitaxial wafer, hinder LED performance, reduce energy saving effect, etc., so as to improve antistatic ability and increase wavelength. Concentration, the effect of improving wavelength uniformity

Active Publication Date: 2021-07-09
XIANGNENG HUALEI OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the brightness of the LED epitaxial wafer prepared by the existing LED epitaxial wafer production method is not high, which seriously hinders the improvement of LED performance and reduces the energy-saving effect of LED.
[0004] In summary, there is an urgent need for a method for manufacturing LED epitaxial wafers to solve the problem of low brightness of LED epitaxial wafers in the prior art.

Method used

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  • Manufacturing method of LED epitaxial wafer
  • Manufacturing method of LED epitaxial wafer

Examples

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Embodiment 1

[0033] see figure 1 , a method for manufacturing an LED epitaxial wafer, comprising the following steps,

[0034] Step 3, making a plurality of raised cones 1.1 at intervals on the AlN layer 1;

[0035] Step 4: Fabricate a plurality of concave and inverted conical cavities 1.2 at intervals on the AlN layer 1, the conical cavities 1.2 and the cones 1.1 are arranged alternately and are not connected in pairs, that is, between any two adjacent conical cavities 1.2 Set a cone 1.1, and set a cone cavity 1.2 between any two adjacent cones 1.1;

[0036] Step 5, periodically growing a plurality of multi-quantum well light-emitting layers on the AlN layer 1, each of the multi-quantum well light-emitting layers includes sequentially grown InGaN well layers and GaN barrier layers, wherein the multi-quantum well light-emitting layers grown in the first period The well light-emitting layer is used to fill up the conical cavity 1.2 in the step 4. From the second cycle, the multi-quantum w...

Embodiment 2

[0050] Different from Example 1, in step 3, D1 is 1000nm, height H1 is 850nm, the shortest distance d1 between the bottom surfaces of adjacent cones 1.1 is 2100nm, and in step 4, D2 is 800nm, and height H2 is 850nm. The shortest distance d2 between the top surface of the conical cavity 1.2 and the bottom surface of the adjacent cone 1.1 is 500nm, and the thickness of the AlN layer 1 is 1800nm.

Embodiment 3

[0052] Different from Example 1, in step 3, D1 is 1100nm, height H1 is 900nm, and the distance d1 between the bottom surfaces of adjacent cones 1.1 is 2200nm, and in step 4, D2 is 900nm, and height H2 is 900nm. The shortest distance d2 between the top surface of the cavity 1.2 and the bottom surface of the adjacent cone 1.1 is 600nm, and the thickness of the AlN layer 1 is 2000nm.

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Abstract

The invention provides a manufacturing method of an LED epitaxial wafer, and the method comprises the following steps: step 3, manufacturing a plurality of protruding cones on an AlN layer at intervals; 4,manufacturing a plurality of concave and inverted conical cavities on the AlN layer at intervals, wherein the conical cavities and the cones are arranged in a staggered mode and are not connected in pairs; 5, periodically growing a plurality of multi-quantum well light-emitting layers on the AlN layer, wherein each multi-quantum well light-emitting layer comprises an InGaN well layer and a GaN barrier layer which are grown in sequence, the multi-quantum well light-emitting layer grown in the first period is used for filling the conical cavities in the step 4, and starting from the second period, the multi-quantum well light-emitting layer grown in the next period is located on an integral structure comprising the AlN layer and the multi-quantum well light-emitting layer grown in the previous period. According to the invention, the brightness of the LED epitaxial wafer can be improved, the antistatic capability is enhanced, the concentration ratio of wavelength is improved, and the forward voltage of the LED epitaxial wafer can be reduced.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a method for manufacturing an LED epitaxial wafer. Background technique [0002] LED epitaxial wafer is a solid light source, which is a light-emitting device made of semiconductor P-N junction. When the forward current is turned on, the minority carriers (ie, electrons) and the majority carriers (ie, holes) in the semiconductor recombine, and the released energy is emitted in the form of photons or partly in the form of photons. LED epitaxial wafer lighting has significant advantages such as high efficiency, energy saving, environmental protection and long service life, and has been widely used in various aspects such as street lights, display screens, indoor lighting and automobile lights. Considering that luminous brightness is the most important measure of the competitiveness of LED epitaxial wafers, how to improve the brightness of LED epitaxial wafers on the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/12H01L33/14H01L33/22
CPCH01L33/22H01L33/06H01L33/145H01L33/12H01L33/005
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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