Ultraviolet LED and manufacturing method thereof

A stress and balance layer technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of expanding and increasing the demand for ultraviolet LEDs, so as to improve the radiation recombination efficiency, reduce the quantum confinement Stark effect, reduce the The effect of the polarization effect

Active Publication Date: 2021-07-09
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, due to the entry into force of the Minamata Convention, the production and import and export of mercury-containing products will be banned from 2020, restricting the production and use of traditional mercury lamps, leading to further expansion of the demand port for ultraviolet LEDs as ultraviolet light sources, further increasing the Increased people's demand for UV LEDs with high luminous efficiency

Method used

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  • Ultraviolet LED and manufacturing method thereof
  • Ultraviolet LED and manufacturing method thereof
  • Ultraviolet LED and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] Specifically, such as Figure 5 As shown, the ultraviolet LEDs include: substrate 60, AlN buffer layer 61, Aln / AlGaN stress release layer 62, N-AlGaN electron supply layer 63, light-emitting layer 70, AlGan barrier layer 64, P-AlGa hole supply layer 65 The Gan ohmic contact layer 66, wherein the light-emitting layer 70 includes 2 to 12 laminated units 71, and the first stress balance layer 712 in each of the lamination units 71 is in. x GA 1-x N stress balance layer, the second stress balance layer 715 is in x GA 1-x N-stress balancing layer, the first quantum layer 711 is Al a GA 1-a N quantum barrier layer, the second quantum barrier 713 is Al a GA 1-a N quantum barrier layer, the first quantum well layer 714 is Al b In c GA 1-b-c N quantum well layer, the second quantum well layer 716 is Al b In c GA 1-b-c N quantum well layer.

Embodiment 2

[0072] Specifically, such as Figure 6 As shown, the ultraviolet LEDs include: substrate 80, AlN buffer layer 81, Aln / AlGaN stress release layer 82, N-AlGaN electron supply layer 83, light emitting layer 90, AlGaN barrier layer 84, P-AlGan hole supply layer 85 The GaN ohmic contact layer 86, wherein the light-emitting layer 90 includes 2 to 12 laminated units 91, and the first stress balancing layer 912 in each of the laminate unit 91 is a GaN stress balancing layer, a second stress balance layer. 915 is the GaN stress balance layer, the first quantum barrier layer 911 is Al a GA 1-a N quantum barrier layer, the second quantum barrier 913 is Al a GA 1-a N quantum barrier layer, the first quantum well layer 914 is Al b In c GA 1-b-c N quantum well layer, the second quantum well layer 916 is Al b In c GA 1-b-c N quantum well layer.

[0073]It should be noted that in the ultraviolet LED provided in Embodiments One and Example 2, the lattice constant of the first stress balance layer...

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Abstract

The embodiment of the invention discloses an ultraviolet LED and a manufacturing method thereof. The ultraviolet LED comprises a substrate and a light-emitting layer; the light-emitting layer comprises at least one lamination unit; the lamination unit comprises a quantum barrier unit and a quantum well unit; the quantum barrier unit comprises a first quantum barrier layer, a first stress balance layer and a second quantum barrier layer which are laminated; each quantum well unit comprises a first quantum well layer, a second stress balance layer and a second quantum well layer which are stacked; and the lattice constant of the first stress balance layer is larger than the lattice constant of the first quantum barrier layer and the lattice constant of the second quantum barrier layer, and the lattice constant of the second stress balance layer is larger than the lattice constant of the first quantum well layer and the lattice constant of the second quantum well layer, so that pressure stress of the second quantum barrier layer below the first quantum well layer on the first quantum well layer can be balanced, the quantum confinement stark effect in the first quantum well layer is reduced, and the luminous efficiency of the ultraviolet LED is improved.

Description

Technical field [0001] The present application relates to the field of LED technology, and more particularly to an ultraviolet LED and a method of making it. Background technique [0002] At the beginning of the 21st century, with the development of LED solid light source technology, UV LED (UV LED) entered the LED lighting era and became a very important ultraviolet light source. Compared with the traditional mercury lamp and xenon lamp, ultraviolet LED has long life, cold light source, no heat radiation, and the life expectancy is not affected by the number of switches, high energy, high irradiation, high efficiency, no toxic substance, environmental protection And the powerful advantages of equipment miniaturization have enabled people to have a strong interest in the technology research and development of UV LEDs to promote the rapid development of ultraviolet LEDs. [0003] Moreover, with the development of ultraviolet LEDs, the application scenarios of UV LEDs are constantl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/12H01L33/00
CPCH01L33/06H01L33/12H01L33/0075
Inventor 卓祥景万志程伟尧刚林志伟
Owner XIAMEN CHANGELIGHT CO LTD
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