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Method for reducing infrared absorptivity of ITO (Indium Tin Oxide) film

A technology of absorption rate and thin film, which is applied in the field of reducing the infrared absorption rate of ITO film, can solve the problems of high film resistivity, unsuitable silicon optical communication, nano-corrugated structure and complex preparation process of Cu/ITO composite film, etc., to reduce infrared Effects of absorption, low resistivity, and high transmittance

Inactive Publication Date: 2021-07-13
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The above-mentioned first method is mainly used in the touch screen field, and the resistivity of the film is still high, which is not suitable for silicon optical communication; while the preparation process of the nano-corrugated structure and Cu / ITO composite film of the latter two methods is complicated

Method used

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  • Method for reducing infrared absorptivity of ITO (Indium Tin Oxide) film
  • Method for reducing infrared absorptivity of ITO (Indium Tin Oxide) film
  • Method for reducing infrared absorptivity of ITO (Indium Tin Oxide) film

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no. 1 example

[0039] According to the first embodiment provided by the present invention, it includes the following steps:

[0040] (1) Substrate cleaning: transparent high-quality float glass is used as the substrate, and acetone is used for cleaning in an ultrasonic environment to ensure the cleanliness of the substrate surface.

[0041] (2) Preparation of ITO thin film: use Denton multi-target magnetron sputtering equipment to deposit ITO thin film, the target rotation speed is 3.6rpm, the sputtering power is 200W, and the ITO thin film of 300nm is obtained after 583s.

[0042] (3) Annealing treatment: Rapid thermal annealing treatment was performed on the prepared ITO film using a rapid thermal treatment furnace (Premtec RTP-CT150M). The annealing temperature was 300° C., the annealing time was 5 minutes, and the annealing atmosphere was air. The final ITO film is obtained after annealing.

[0043] (4) Optical performance test: the absorptivity (A), transmittance (T), and reflectance (...

Embodiment 2

[0046] The implementation process is the same as in Example 1 except for the following differences.

[0047] The ITO film prepared in step (2) was subjected to rapid thermal annealing in a rapid thermal treatment furnace (Premtec RTP-CT150M). The annealing temperature was 350° C., the annealing time was 5 minutes, and the annealing atmosphere was air. The final ITO film is obtained after annealing.

[0048] The obtained result is different from the optical properties of the ITO thin film in Example 1, and the obtained result is as follows Figure 4 As shown; the resistance characteristics are different, and the obtained film resistivity is shown in Table 2.

Embodiment 3

[0050] The implementation process is the same as in Example 1 except for the following differences.

[0051] The ITO film prepared in step (2) was subjected to rapid thermal annealing in a rapid thermal treatment furnace (Premtec RTP-CT150M). The annealing temperature was 400° C., the annealing time was 5 minutes, and the annealing atmosphere was air. The final ITO film is obtained after annealing.

[0052] The obtained result is different from the optical properties of the ITO thin film in Example 1, and the obtained result is as follows Figure 5 As shown; the resistance characteristics are different, and the obtained film resistivity is shown in Table 2.

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Abstract

The invention provides a method for reducing infrared absorptivity of an ITO (Indium Tin Oxide) film, which comprises the following steps: a substrate cleaning step: using transparent high-quality float glass as a substrate, and using acetone for cleaning in an ultrasonic environment; an ITO thin film preparation step: depositing an ITO thin film, setting a target rotating speed and sputtering power, and obtaining the ITO thin film after set time; and an annealing treatment step: carrying out rapid thermal annealing treatment on the prepared ITO film by using a rapid thermal treatment furnace, and obtaining the final ITO film after annealing. According to the invention, the preparation of the ITO film with low infrared absorption and high transmittance is realized, and the resistivity of the film is relatively low. And the subsequent treatment process is simple and stable.

Description

technical field [0001] The invention relates to the thin film field of silicon optical communication, in particular to a method for reducing the infrared absorption rate of an ITO thin film. Background technique [0002] In silicon photonics communication systems, active devices such as photodetectors and modulators require electrodes to function properly. Commonly used electrode materials are generally Ti / TiN / Al, Al / Ti / Au, W / Cu and other metal electrodes. However, metal electrodes have strong infrared absorption for light in the infrared communication band, resulting in a large propagation loss of light in the waveguide, thus reducing the responsivity of the detector. The ITO thin film has both high light transmittance and low resistance characteristics after process optimization, and can be used as a detector electrode to solve the problem of high infrared absorption of metal electrodes. [0003] Lin Feng et al. (Patent No.: 201310306744.1) thoroughly cleaned and polishe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/58
CPCC23C14/35C23C14/086C23C14/5806
Inventor 程秀兰李雅倩王晓东付学成刘民权雪玲
Owner SHANGHAI JIAO TONG UNIV
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