Infrared focal plane array detector with DLC protection film and preparation method thereof
An infrared focal plane and array detector technology, applied in the field of infrared focal plane array, can solve problems such as poor picture quality, increased production costs, and reduced product service life
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[0029] The invention provides a method for preparing an infrared focal plane array detector with a DLC protective film, which includes the following steps:
[0030] A) Wash the windows of the infrared focal plane array detector with acetone and working fluid in sequence;
[0031] B) Put argon gas into the window of the cleaned infrared focal plane array detector under vacuum conditions to perform radio frequency plasma cleaning;
[0032] C) Then enter the carbon source gas, and use the radio frequency plasma enhanced chemical vapor deposition method to deposit a DLC protective film on the surface of the window of the infrared focal plane array detector to obtain an infrared focal plane array detector with DLC protective film;
[0033] The radio frequency power in the step C) is 100~2500W, and the vacuum degree in the step C) is 3×10 -3 ~3×10 - 5 Pa.
[0034] The infrared focal plane array detector absorbs infrared waves for imaging. In the terminal use scene, the detector will be equipp...
Embodiment 1
[0053] Cleaning the substrate: Use acetone to clean under ultrasound for 5 minutes to remove surface oil, then use acetone working fluid to clean under ultrasound for 5 minutes, and then repeatedly rinse with deionized water for 10 minutes to remove surface impurities. Spin dry in a spin dryer, and immediately put the washed window on the pole plate of the vacuum chamber to vacuum.
[0054] Deposition of DLC film: when the vacuum reaches the set value of 0.0013Pa, argon is introduced, the flow of argon is 30Sccm, and the RF power is adjusted to 300W for argon ion cleaning.
[0055] Then pass the carbon source gas CH 4 , Set the RF power to 300W, the cavity temperature to be 200℃, the substrate bias to 250v, and the vacuum to be 3×10 -3 Pa, the carbon source gas flow rate is 60 sccm, and the DLC film is deposited.
[0056] After the deposition is completed, turn off the radio frequency power supply, stop the introduction of carbon source gas, increase the flow of argon gas, release th...
Embodiment 2
[0058] Cleaning the substrate: Use acetone to clean under ultrasound for 10 minutes to remove surface oil, then use acetone working fluid to clean under ultrasound for 20 minutes, and then repeatedly rinse with deionized water for 10 minutes to remove surface impurities. Spin dry in a spin dryer, and immediately put the washed window on the pole plate of the vacuum chamber to vacuum.
[0059] Deposition of DLC film: When the vacuum reaches the set value of 0.13Pa, argon is introduced, the argon flow rate is 90 Sccm, and the RF power is adjusted to 300W for argon ion cleaning.
[0060] Then pass the carbon source gas CH 4 , Set RF power to 300W, cavity temperature 175℃, substrate bias, vacuum degree 5×10 -4 Pa, the carbon source gas flow rate is 40 sccm, and the DLC film is deposited.
[0061] After the deposition is completed, turn off the RF power supply, stop the introduction of carbon source gas, adjust the flow of argon gas, release the vacuum, and take out the product.
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Abstract
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