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Target layout correction method and mask layout forming method

A target correction and mask technology, applied in the field of correction method and mask layout formation

Pending Publication Date: 2021-07-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are still many problems in the mask manufactured by the photolithography process using extreme ultraviolet light as the light source.

Method used

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  • Target layout correction method and mask layout forming method
  • Target layout correction method and mask layout forming method
  • Target layout correction method and mask layout forming method

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Experimental program
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Embodiment Construction

[0025] As mentioned in the background, there are still many problems in the mask plate formed by the existing extreme ultraviolet (EUV) exposure technology. Specifically, the extreme ultraviolet (EUV) exposure process is generally performed in a scanning manner. In an extreme ultraviolet (EUV) exposure system, scanning can be performed using slits that confine light to a local area of ​​the mask, so that the mask The graphics on the plate are transferred to the substrate. The slit has a curved structure, and the curved structure enables the reflected light of extreme ultraviolet (EUV) to achieve uniform illumination distribution on the surface of the mask plate. And because the slit has a curved structure, the azimuth angles of the extreme ultraviolet light passing through different positions of the slit are different, so when the extreme ultraviolet light passes through the slit and irradiates the mask, it is reflected by the mask to the surface of the substrate Afterwards, ...

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Abstract

The invention discloses a target layout correction method, a mask layout forming method and a mask thereof, and the correction method comprises the following steps: providing an initial target layout which comprises a plurality of initial patterns; performing simulation exposure on the initial target layout to obtain a simulation exposure layout, wherein the simulation exposure layout is provided with a plurality of simulation exposure patterns corresponding to the initial patterns, and the simulation exposure layout comprises a plurality of correction areas arranged in the first direction; obtaining a target graph in the simulated exposure graph of the at least one correction area; obtaining a correction rule of a correction area corresponding to the target graph; and correcting the target graph through the correction rule to obtain a corrected graph. The mask layout obtained through adoption of the correction method is good in correction effect and high in precision.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for correcting a target layout and a method for forming a mask layout. Background technique [0002] Photolithography technology is a crucial technology in semiconductor manufacturing technology, which can realize the transfer of patterns from the mask to the surface of silicon wafers to form semiconductor products that meet the design requirements. In the photolithography process, first, through the exposure step, light is irradiated onto the silicon wafer coated with photoresist through the light-transmitting or reflective area of ​​the mask, and reacts photochemically with the photoresist; Step, using photosensitive and non-photosensitive photoresist to the degree of dissolution of the developer, forming a photoresist pattern, and realizing the transfer of the mask plate pattern; then, through the etching step, based on the photoresist layer formed by the ph...

Claims

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Application Information

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IPC IPC(8): G03F1/72G03F1/76G03F7/20
CPCG03F1/72G03F1/76G03F7/70425
Inventor 王健张迎春
Owner SEMICON MFG INT (SHANGHAI) CORP
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