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Preparation method of on-chip chalcogenide material filling structure

A technology of chalcogenide and chalcogenide thin films, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as difficult filling and post-polishing treatment

Pending Publication Date: 2021-07-13
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003]The filling structure is very important for on-chip dynamic optical devices, however, there are some difficulties in preparing the filling structure for softer chalcogenide materials by photolithography: the material is soft and difficult Perform traditional post-fill polishing

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  • Preparation method of on-chip chalcogenide material filling structure
  • Preparation method of on-chip chalcogenide material filling structure
  • Preparation method of on-chip chalcogenide material filling structure

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Embodiment Construction

[0032] The accompanying drawings are for illustrative purposes only, and should not be construed as limiting the present invention; in order to better illustrate this embodiment, certain components in the accompanying drawings will be omitted, enlarged or reduced, and do not represent the size of the actual product; for those skilled in the art It is understandable that some well-known structures and descriptions thereof may be omitted in the drawings. The positional relationship described in the drawings is for illustrative purposes only, and should not be construed as limiting the present invention.

[0033] Chalcogenide material is an amorphous material formed by combining sulfur with germanium, arsenic, antimony, etc. It has a high refractive index (between 2.1-2.8) and a high nonlinear coefficient (that of silicon oxide materials) 100 times), it has negligible two-photon absorption in the communication band relative to silicon and other platform materials, low temperature...

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Abstract

The invention relates to the technical field of on-chip micro-nano optoelectronic device preparation, in particular to a preparation method of an on-chip chalcogenide material filling structure. Through electron beam exposure, deep reactive plasma reaction etching, chalcogenide film growth through thermal evaporation and three-step photoresist removing processes, a soft chalcogenide film structure is filled on a chip, and compared with the traditional filling structure preparation, the preparation method of the on-chip chalcogenide material filling structure is high in precision and is easy to implement.

Description

technical field [0001] The invention relates to the technical field of preparation of on-chip micro-nano optoelectronic devices, and more particularly, to a preparation method of an on-chip chalcogenide material filling structure. Background technique [0002] Micro-nano-fabrication technology refers to the design, processing, assembly, integration and application technology of parts in the order of millimeters, microns and nanometers, as well as the components or systems composed of these parts. Micro-nano manufacturing includes two aspects of micro-manufacturing and nano-manufacturing. Among them, nanofabrication refers to the manufacturing technology of nanoscale structures, devices and systems with specific functions, and lithography is an important nanofabrication. A photoresist is coated on a base material such as silicon, and then the photoresist layer is exposed through a mask with an energy beam with a very high limit resolution. After development, the same and fi...

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Application Information

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IPC IPC(8): H01L21/263H01L21/266
CPCH01L21/2636H01L21/266
Inventor 李朝晖曾思清
Owner SUN YAT SEN UNIV