Quantum dot light emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is used in the manufacture of semiconductor/solid-state devices, electrical components, and electric solid-state devices. Sex, the effect of avoiding agglomeration

Active Publication Date: 2021-07-16
TCL CORPORATION
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem that quantum dots are difficult to balance good dispersion and charge injection and transport capabilities

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0028] like figure 1 As shown, the first aspect of the embodiment of the present invention provides a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0029] S01. Provide a bottom electrode substrate, and form a first nanocolumn structure on the bottom electrode surface of the bottom electrode substrate;

[0030] S02. Binding quantum dots containing initial ligands on the surface of the first nanocolumn structure, providing target ligands to exchange with the initial ligands on the surface of the quantum dots, and preparing a quantum dot film bound with target ligands.

[0031] The preparation method of the quantum dot light-emitting diode provided by the embodiment of the present invention firstly forms the first nanocolumn structure on the surface of the bottom electrode of the bottom electrode substrate; Quantum dots with initial ligands enter the pores of the first nanocolumn structure, and by controlling the spacing width between...

Embodiment approach

[0064] In this embodiment, the first nanocolumn structure is not used to directly combine quantum dots and standardize the arrangement of quantum dots, but to form a second nanocolumn corresponding to the first nanocolumn structure on the surface of the first functional layer Structures provide the structural foundation. It is equivalent to forming a first functional layer with a uniform thickness on the surface of the first nano-column structure to obtain the second nano-column structure, and the gaps between the second nano-column structures are used to accommodate quantum dots. At this time, compared with the first nanocolumns, the gap between the second nanocolumns is smaller, but the maximum radial dimension of the second nanocolumns increases, specifically, the l 1 , l 2 Satisfied: l 2 1 ; At the same time, the s 1 , s 2 Meet: s 1 2 .

[0065] In order to make the quantum dots deposited in the gap between the second nanopillars have better dispersion and stability,...

Embodiment 1

[0091] like Figure 2-11 Shown, a kind of preparation method of quantum dot light-emitting diode, comprises the following steps:

[0092] Prepare ITO electrodes on transparent substrates;

[0093] Configure a polystyrene deionized water / ethanol mixture with a polystyrene mass percentage concentration of 0.1% to 10%, and prepare a single-layer periodic ordered / disordered PS nanosphere mask on the ITO surface of the ITO electrode by self-organization method. Film, the cross-sectional view of the single-layer polystyrene nanosphere film prepared on the surface of the ITO layer is as follows figure 2 As shown, the top view of the single-layer polystyrene nanosphere film prepared on the surface of the ITO layer is as follows image 3 shown. RIE etching was performed on the prepared single-layer periodic ordered / disordered polystyrene nanosphere film to increase the gap between polystyrene nanospheres to obtain a polystyrene nanosphere mask, and polystyrene nanospheres were form...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention provides a preparation method of a quantum dot light emitting diode, which comprises the following steps of providing a bottom electrode substrate, and forming a first nano column structure on the surface of a bottom electrode of the bottom electrode substrate, and combining quantum dots containing initial ligands on the surface of the first nano column structure, and carrying out ligand exchange on the quantum dots of which the surfaces are combined with the initial ligands by adopting target ligands to prepare the quantum dot film combined with the target ligands. According to the preparation method of the quantum dot light emitting diode provided by the invention, the quantum dot film with good dispersibility and charge injection and transmission capability can be obtained.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot electroluminescent devices (QLEDs) have shown great application potential due to their advantages such as low turn-on voltage, narrow luminescence peak, and tunable luminescence wavelength. QLED adopts a sandwich structure, including an anode and a cathode, and a quantum dot light-emitting layer arranged between the anode and the cathode. Currently, QLEDs generally include an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a cathode. Among them, the preparation of quantum dot light-emitting layer is particularly important. [0003] In existing QLEDs, electrons and holes are provided by the injection layer, pass through the transport layer, and finally recombine and emit light in the quantum do...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50
CPCH10K71/12H10K50/14H10K50/00H10K71/00
Inventor 雷卉刘文勇杨一行
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap