Preparation method of carbon-silicon carbide ceramic target blank

A technology of silicon carbide ceramics and silicon carbide, which is applied in the field of target materials, can solve problems such as poor density, low welding bonding rate, and low yield, and achieve the effect of increasing yield, increasing density, and solving the problem of desoldering

Active Publication Date: 2021-07-20
上海戎创铠迅特种材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, when the target blank prepared in the prior art is used as the target material and the back plate for welding, there are still problems such as poor wetting effect during welding, which leads to low welding bonding rate, poor density and low yield, etc. question

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] This embodiment provides a method for preparing a silicon carbide ceramic target blank. The preparation method includes the following steps:

[0056] Loading the carbon-silicon carbide composite powder into a mold for cold pressing, followed by hot pressing sintering and cooling down to obtain the carbon silicon carbide ceramic target blank;

[0057] The sphericity of the particles in the carbon-silicon carbide composite powder is 0.9, and the particle size is 140-150 μm; the mass ratio of carbon and silicon carbide in the carbon-silicon carbide composite powder is 47:53;

[0058] The cold pressing is molding the molded composite powder; the cold pressing includes the first cold pressing and the second cold pressing carried out in sequence;

[0059] The pressure of the first cold pressing is 2MPa; the time of the first cold pressing is 3s; the pressure of the second cold pressing is 13MPa; the holding time of the second cold pressing is 3min;

[0060] Vacuumizing treat...

Embodiment 2

[0067] This embodiment provides a method for preparing a silicon carbide ceramic target blank. The preparation method includes the following steps:

[0068] Loading the carbon-silicon carbide composite powder into a mold for cold pressing, followed by hot pressing sintering and cooling down to obtain the carbon silicon carbide ceramic target blank;

[0069] The sphericity of the particles in the carbon-silicon carbide composite powder is 0.8, and the particle size is 120-150 μm; the mass ratio of carbon and silicon carbide in the carbon-silicon carbide composite powder is 2:3;

[0070] The cold pressing is molding the molded composite powder; the cold pressing includes the first cold pressing and the second cold pressing carried out in sequence;

[0071] The pressure of the first cold pressing is 1MPa; the time of the first cold pressing is 4s; the pressure of the second cold pressing is 10MPa; the holding time of the second cold pressing is 5min;

[0072] Vacuumizing treatme...

Embodiment 3

[0079] This embodiment provides a method for preparing a silicon carbide ceramic target blank. The preparation method includes the following steps:

[0080] Loading the carbon-silicon carbide composite powder into a mold for cold pressing, followed by hot pressing sintering and cooling down to obtain the carbon silicon carbide ceramic target blank;

[0081] The sphericity of the particles in the carbon-silicon carbide composite powder is 1, and the particle size is 170-180 μm; the mass ratio of carbon and silicon carbide in the carbon-silicon carbide composite powder is 1:1;

[0082] The cold pressing is molding the molded composite powder; the cold pressing includes the first cold pressing and the second cold pressing carried out in sequence;

[0083] The pressure of the first cold pressing is 1.5MPa; the time of the first cold pressing is 2s; the pressure of the second cold pressing is 15MPa; the holding time of the second cold pressing is 2min;

[0084] Vacuumizing treatme...

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Abstract

The invention relates to a preparation method of a carbon-silicon carbide ceramic target blank, and the preparation method comprises the following steps: filling carbon-silicon carbide composite powder into a die, carrying out cold pressing, and then sequentially carrying out hot pressing sintering and cooling to obtain the carbon-silicon carbide ceramic target blank. The sphericity degree of particles in the carbon-silicon carbide composite powder is 0.8-1, and the granularity of the particles is 120-180 microns. the hot pressing sintering comprises first heat preservation, second heat preservation, and heat preservation and pressure preservation which are sequentially carried out. The high-performance target blank is prepared by controlling the sphericity and proportion of the raw materials in the preparation process and adopting a pre-cold-pressing mode, good infiltration can be realized when the prepared target blank and a back plate are welded, so that the target material and the back plate can be well welded, the welding binding rate is up to 99% or above, the density can reach 99% or above, and the yield can also reach 98% or above.

Description

technical field [0001] The invention relates to the field of target materials, in particular to a method for preparing a silicon carbide ceramic target blank. Background technique [0002] In recent years, with the expansion of thermal printing and 3D printing markets, the demand for silicon carbide targets in the industry is increasing day by day. However, due to the special material properties of silicon carbide targets, the production technology is difficult and the post-processing is difficult, so that it is currently impossible to produce silicon carbide targets with high density and stable performance in China, which cannot meet the quality requirements of the heat-sensitive industry. requirements. [0003] For example, CN110273125A discloses a method for preparing a fluorescent silicon carbide film. A method for preparing a fluorescent silicon carbide film by magnetron sputtering is characterized in that it comprises the following steps: (1) selecting the preparatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/528C04B35/565C04B35/622C04B35/645B28B3/02
CPCC04B35/528C04B35/565C04B35/622C04B35/645B28B3/02C04B2235/6581C04B2235/6562C04B2235/6567C04B2235/5427C04B2235/5296
Inventor 姚力军王巨宝王学泽杨慧珍
Owner 上海戎创铠迅特种材料有限公司
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