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Flexible artificial synaptic device and production method thereof

A synaptic device, artificial technology, applied in the direction of neural learning methods, electrical components, biological neural network models, etc., can solve the problems of small resistance variable ratio of device units, large operating current, etc., and achieve low write voltage and low power consumption , The effect of reducing the junction resistance

Pending Publication Date: 2021-07-23
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current memristor still has the technical problems of relatively small resistive variable ratio of the device unit and high operating current.

Method used

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  • Flexible artificial synaptic device and production method thereof
  • Flexible artificial synaptic device and production method thereof
  • Flexible artificial synaptic device and production method thereof

Examples

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Embodiment Construction

[0040] In order to make the purpose, features and advantages of the present application more obvious and understandable, the technical solutions in the embodiments of the present application are clearly and completely described. Obviously, the embodiments described below are only part of the embodiments of the present application, and Not all examples. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0041] Unless otherwise specified, the reagents, methods and equipment used in the examples of the present application are conventional reagents, methods and equipment in the technical field.

[0042] Please refer to figure 1 , figure 1 The device structure diagram of the flexible artificial synapse device provided by the embodiment of this application. In the figure, a bottom electrode 3, a tungsten oxide film 2 and a top ...

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Abstract

The invention belongs to the technical field of artificial synaptic devices. The invention provides a flexible artificial synaptic device and a production method thereof. The flexible artificial synaptic device comprises a substrate, a bottom electrode and a top electrode, and a tungsten oxide film is deposited on the bottom electrode. The flexible artificial synapse device not only has the resistance change characteristic of a memristor, but also can realize similar functions of biological synapses, including double-pulse facilitation (PPF), long-term enhancement (LTP), pulse time dependent plasticity (STDP), pulse frequency dependent plasticity (STRP) and the like, and has the advantages of low power consumption, fast response and strong tolerance. The device can be used for constructing an artificial neural network system, and a feasible way is provided for realizing a wearable neural morphology computing system.

Description

technical field [0001] The application belongs to the technical field of artificial synapse devices, and in particular relates to a flexible artificial synapse device and a preparation method thereof. Background technique [0002] Memristor is the fourth passive electronic component besides resistors, capacitors, and inductors. According to the memristor theory, it represents the relationship between magnetic flux and charge, and the resistance of the device can vary with the amount of charge flowing through it. And dynamic changes occur, and can maintain this resistance state. Memristors have attracted much attention due to their unique electrical properties and have shown broad prospects in many fields. For example, memristors can undergo reversible transitions between high-resistance states and low-resistance states induced by an electric field (ie: digital memristors), and their high speed, high density, and good information retention make them promising to develop into...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G06N3/04G06N3/08
CPCG06N3/04G06N3/08H10N70/8833H10N70/026
Inventor 唐振华张莉胡松程姚帝杰刘志钢
Owner GUANGDONG UNIV OF TECH
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