A kind of p-type doped halide perovskite semiconductor and preparation method thereof
A halide perovskite and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as doping
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Embodiment 1
[0026] A P-type doped halide perovskite semiconductor, such as figure 1 As shown, the semiconductor is manufactured by ABX 3 Type halide perovskite or its derivatives and P-type dopant. Among them, ABX 3 In the A-type halide perovskite or its derivatives, the A position is a positive monovalent cation, the B position is a positive divalent cation, and the X position is a negative monovalent halogen or pseudohalogen anion; the P-type dopant is composed of a positive monovalent cation D A , Positive monovalent cation D DB , Negative monovalent anion D X , halogen or pseudohalogen atom D DX Composition; Positive monovalent cation D A Grown in ABX 3 A site of type halide perovskite or its derivatives, positive monovalent cation D DB Grown in ABX as doping element 3 type halide perovskite or its derivatives at the B site, leading to ABX 3 Type halide perovskite or its derivatives generate X-site vacancies, negative monovalent anions D X Grown in ABX 3 X position of type ...
Embodiment 2
[0037] A method for preparing a P-type doped halide perovskite semiconductor as described in Embodiment 1, comprising:
[0038] Adding D to the precursor of halide perovskite or its derivatives A 、D DB 、D X 、D DX A dopant, using the precursor to prepare a halide perovskite to obtain a P-type doped halide perovskite semiconductor; or,
[0039] Place the halide perovskite or its derivatives in D A 、D DB 、D X 、D DX In the solution or vapor atmosphere of the dopant, by diffusion, a P-type doped halide perovskite semiconductor is obtained; or,
[0040] Adding D to the precursor of halide perovskite or its derivatives A 、D DB 、D X 、D DX One or more of the dopants, the precursor is used to prepare the halide perovskite, and the prepared halide perovskite is placed in the solution or vapor atmosphere of the remaining several dopants, and by diffusion, the obtained P-type doped halide perovskite semiconductors.
[0041] The preparation method of the P-type halide perovskit...
example 1
[0043] Example 1: P-type MAPbI 3 Halide perovskite and its preparation
[0044] Weigh 1mmol of methylamine iodide MAI, 1mmol of lead iodide PbI 2 , to which was added 0.01 mmol of MAI, 0.01 mmol of KI iodide, 0.005 mmol of iodine I 2 , then add 1mL of DMF solvent, stir and dissolve to obtain a P-type doped perovskite precursor solution; weigh 1mmol of MAI, 1mmol of PbI 2 , add 1mL of DMF solvent to it, and configure the reference perovskite precursor solution; take the P-type doped perovskite precursor solution and the reference perovskite precursor solution, and spin-coat on the conductive glass substrate to prepare MAPbI 3 Perovskite film; the work function of the obtained film was tested, and it was found that the MAPbI prepared by using the P-type doped precursor solution 3 The work function of the perovskite film increased by 0.7eV compared with the reference film. The conductivity of the two perovskite films was measured at the same time, and it was found that the con...
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