Electroluminescent diode device and preparation method thereof, and display device

A luminescence and diode technology, applied in the field of electronic display, can solve the problems of quantum dot charging, hole and electron number imbalance, Auger recombination, etc., and achieve the effect of increasing potential barrier, reducing electron injection, and dense packing

Active Publication Date: 2022-08-09
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The combined effect of the above factors makes the number of holes and electrons finally transported to the quantum dot light-emitting layer unbalanced, which in turn leads to problems such as charging of quantum dots, non-radiative luminescence such as Auger recombination, and the excess electrons will also be transported to the hole transport layer. Influencing the performance and lifetime of the hole transport layer
[0004] Therefore, the current electroluminescent diode device and its preparation method and display device still need to be improved.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electroluminescent diode device and preparation method thereof, and display device
  • Electroluminescent diode device and preparation method thereof, and display device
  • Electroluminescent diode device and preparation method thereof, and display device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0057] An embodiment of the present invention also provides a method for preparing an electroluminescent diode device, the electroluminescent diode device prepared by the method can be the aforementioned electroluminescent diode device, and thus, the method can have the aforementioned electroluminescent diode device. All the features and advantages of electroluminescent diode devices. The method includes the following steps.

[0058] forming a cathode, an electron transport layer, a first ligand layer, a light emitting layer, a second ligand layer, a hole transport layer and an anode in sequence on the substrate; or

[0059] forming an anode, a hole transport layer, a second ligand layer, a light-emitting layer, a first ligand layer, an electron transport layer and a cathode in sequence on the substrate;

[0060] Wherein, the light-emitting layer is a quantum dot light-emitting layer, which includes quantum dots and surface ligands combined with the quantum dots.

[0061] Pr...

Embodiment 1

[0084] (1) Prepare the ITO cathode on the glass substrate by evaporation; spin the zinc oxide ink on the ITO cathode by spin coating on the ITO cathode, vacuum dry the film and anneal at 120°C for 15 minutes to form electrons The transport layer has a thickness of 45 nm.

[0085] (2) N,N,N',N'-tetrakis(N-(2-aminoethyl)propionamido)ethylenediamine was dissolved in methanol, and spin-coated on the electron transport layer by spin coating During the spin coating process, the rotational speed was 3000 rpm, and the spin coating time was 30 s, and then the excess amide compounds were rinsed off with methanol to form the first ligand layer.

[0086] (3) Prepare a light-emitting layer on the first ligand layer, spin-coat the CdZnS (core material) / ZnS (shell material) quantum dot ink on the first ligand layer, and dry it in a vacuum to form a film and then anneal it at 100° C. for 10 minutes to form a The light-emitting layer has a thickness of 20 nm. The surface ligand of the quantu...

Embodiment 2

[0093] (1) Prepare the ITO cathode on the glass substrate by evaporation; spin the zinc oxide ink on the ITO cathode by spin coating on the ITO cathode, vacuum dry the film and anneal at 120°C for 15 minutes to form electrons The transport layer has a thickness of 45 nm.

[0094] (2) N,N,N',N'-tetrakis(N-(2-aminoethyl)propionamido)ethylenediamine was dissolved in methanol, and spin-coated on the electron transport layer by spin coating During the spin coating process, the rotational speed was 3000 rpm, and the spin coating time was 30 s, and then the excess amide compounds were rinsed off with methanol to form the first ligand layer.

[0095] (3) Prepare a light-emitting layer on the first ligand layer, spin-coat the CdZnS (core material) / ZnS (shell material) quantum dot ink on the first ligand layer, and dry it in a vacuum to form a film and then anneal it at 100° C. for 10 minutes to form a The light-emitting layer has a thickness of 20 nm. The surface ligand of the quantu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an electroluminescent diode device, a preparation method thereof, and a display device. The electroluminescent diode device comprises a cathode, an electron transport layer, a first ligand layer, a light-emitting layer, a second ligand layer, and a hole transport layer. layer and anode; wherein, the light-emitting layer includes quantum dots and surface ligands bound to the quantum dots; the material of the first ligand layer is an amide compound; the material of the second ligand layer is selected from : at least one of a bidentate aliphatic compound, a bidentate aromatic compound, and a monodentate bidentate aliphatic compound. Among them, the first ligand layer can effectively hinder the injection of electrons into the light-emitting layer, and the second ligand layer can effectively promote the injection of holes into the light-emitting layer. The two work together to balance the number of carriers in the light-emitting layer, which helps to improve the performance of the device. The luminescence performance can also improve the life and stability of the device.

Description

technical field [0001] The invention relates to the technical field of electronic display, in particular to an electroluminescent diode device, a preparation method thereof, and a display device. Background technique [0002] Electroluminescent diodes can directly convert electrical energy into light energy, and have been used in various places where lighting or display is required in human daily production and life. Among them, quantum dot light-emitting diodes (QLEDs) use quantum dots as the light-emitting active layer, which has the advantages of saturated color and adjustable wavelength of the emitted light, and high photoluminescence and electroluminescence quantum yields. Compared with traditional organic light-emitting diodes ( OLED) has obvious advantages. [0003] A general quantum dot light-emitting diode includes: an anode layer, a hole injection layer (HIL), a hole transport layer (HTL), a quantum dot light-emitting layer (EML), an electron transport layer (ETL)...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/615H10K85/631H10K50/11H10K2101/40H10K50/115H10K71/00
Inventor 眭俊
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap