Surface acoustic wave device and manufacturing method thereof
A technology of surface acoustic wave devices and manufacturing methods, which is applied to electrical components, impedance networks, etc., can solve the problems of narrow packaging process options and high manufacturing costs, and achieve the effects of low frequency temperature coefficient, reduced packaging costs, and improved heat dissipation performance
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Embodiment 1
[0041] Embodiment 1: as figure 1 , 2 As shown, SAW devices include:
[0042] Piezoelectric substrate 1;
[0043] an interdigital transducer 2, arranged on the piezoelectric substrate 1;
[0044] a dielectric layer 3, which is disposed on the piezoelectric substrate 1 and at least partially covers the interdigital transducer 2;
[0045] An inductor 4, which is arranged on or in the dielectric layer 3;
[0046] The inductor 4 is located above the IDT 2 and avoids the working area of the IDT 2 .
[0047] Wherein, the piezoelectric substrate may be lithium tantalate (LT), lithium niobate (LN), quartz, lanthanum gallium silicate (LGS) and other materials. figure 1 For the inductor to be set in the dielectric layer, figure 2The inductor is arranged on the dielectric layer. The working area of the IDT refers to the vibration-energy conversion area of the IDT (that is, the area on the surface of the piezoelectric substrate that is in contact with the interdigital electro...
Embodiment 2
[0053] Embodiment 2: as Figure 4 , 5 As shown, SAW devices include:
[0054] Piezoelectric substrate 1;
[0055] an interdigital transducer 2, arranged on the piezoelectric substrate 1;
[0056] a dielectric layer 3, which is disposed on the piezoelectric substrate 1 and does not cover the IDT 2;
[0057] An inductor 4, which is arranged on or in the dielectric layer 3;
[0058] The inductor 4 is located above the IDT 2 and avoids the working area of the IDT 2 .
[0059] Wherein, the piezoelectric substrate may be lithium tantalate (LT), lithium niobate (LN), quartz, lanthanum gallium silicate (LGS) and other materials. figure 1 For the inductor to be set in the dielectric layer, figure 2 The inductor is arranged on the dielectric layer. Figure 4 for the inductance provided in the dielectric layer, Figure 5 The inductor is arranged on the dielectric layer. The fact that the inductor is located above the IDT means that the inductor is located higher than the IDT....
Embodiment 3
[0066] Embodiment 3: as figure 1 , 2 , 6, the surface acoustic wave device manufacturing method includes the following steps:
[0067] Prepare a piezoelectric substrate 1, and fabricate an interdigital transducer 2 on the piezoelectric substrate 1;
[0068] Fabricating a dielectric layer 3 on the piezoelectric substrate 1, the dielectric layer 3 at least partially covers the IDT 2;
[0069] Make inductor 4 (as figure 2 shown), or make an inductance 4 in the dielectric layer 3 avoiding the working area of the interdigital transducer 2 (such as figure 1 shown).
[0070] Wherein, the making of the interdigital transducer can specifically prepare a metal coating on a piezoelectric substrate, and pattern the metal coating to form an interdigital electrode; wherein, the patterning can be a general semiconductor etching process, and the The width of the interdigitated electrodes can be preset as required, and there is no limitation here. The working area of the IDT refers ...
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