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Photoelectric spectrum response range regulation and control method and system

A technology for spectral response and regulation system, which is applied in the field of regulation method and system of photoelectric spectral response range, and can solve the problem of small application field of photodetector.

Pending Publication Date: 2021-07-30
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method and system for controlling the range of photoelectric spectral response to solve the problem of small application fields of photodetectors in the prior art

Method used

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  • Photoelectric spectrum response range regulation and control method and system
  • Photoelectric spectrum response range regulation and control method and system
  • Photoelectric spectrum response range regulation and control method and system

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0043] figure 1 It is a flow chart of a method for regulating and controlling the photoelectric spectral response range of the present invention, such as figure 1 As shown, a photoelectric spectral response range control method, including:

[0044] Step 101: Using diamond to pre-press the anvil 1 and the gasket material 2, and drilling a circular hole in the center of the indentation with a laser as a sample cavity. Specifically, a diamond with an anvil surface diameter of 300um is used to pre-press the anvil 1 and the gasket material 2, and the T301 steel sheet used as the gasket material 2 is pre-pressed into a thickness of about 40um, and the center of the indentation is drilled with a laser. A circular hole with a diameter of 120um serves as the sample cavity.

[0045] Insulating the electrode and the sample cavity, specifically including:

[0046] Fill the sample cavity with boron nitride powder 7, and pre-press to above 20GPa, so that the boron nitride powder 7 is clo...

Embodiment 2

[0059] After the sample preparation is completed, slowly rotate the pressure screw with a hexagonal wrench to drive the upper and lower diamonds to approach each other to exert pressure on the semiconductor iodine, so that the pressure in the sample chamber is 1.2GPa, and the pressure is calibrated by ruby.

[0060] The enameled wire with the paint removed at the end is connected to the two probes of the digital source meter 5, and a 5V bias voltage is applied to the semiconductor iodine through the digital source meter 5. Use a near-infrared laser 8 light source with a wavelength of 1064nm to irradiate the semiconductor iodine through the diamond, and the optical power density of the laser irradiating the semiconductor iodine is about 0.8mW / cm 2 , Precise time control of the presence / absence of light through an electronic shutter, the time of presence / absence of light is set to 30 seconds, and one cycle is 60 seconds. The semiconductor iodine is determined by recording and obs...

Embodiment 3

[0063] After completing Example 2, continue to slowly rotate the pressure screw with the hexagonal wrench to drive the upper and lower diamonds to approach each other to apply pressure to the semiconductor iodine, so that the pressure in the sample chamber is 2.5GPa, and the pressure is calibrated by ruby.

[0064] The enameled wire with the paint removed at the end is connected to the two probes of the digital source meter 5, and a 5V bias voltage is applied to the semiconductor iodine through the digital source meter 5. Use a near-infrared laser 8 with a wavelength of 1064nm to irradiate the semiconductor iodine through the diamond, and the optical power density of the laser to the semiconductor iodine is about 0.8mW / cm 2 , Precise time control of the presence / absence of light through an electronic shutter, the time of presence / absence of light is set to 30 seconds, and one cycle is 60 seconds. The semiconductor iodine is determined by recording and observing the current-time...

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Abstract

The invention relates to a photoelectric spectrum response range regulation and control method, which comprises the following steps of: pre-pressing a sealing gasket material by adopting a diamond anvil cell, and drilling a round hole in the center of an indentation as a sample cavity; filling the sample cavity with a layer of photoelectric material, and connecting two ends of the photoelectric material with a platinum sheet as an electrode; respectively connecting the two electrodes with a probe of a digital source meter, and applying 5V bias voltage to the photoelectric material by using the digital source meter; placing a standard pressure substance in a sample cavity of the diamond anvil cell for calibrating the pressure; closing the diamond anvil cell, rotating the pressurizing screw, and pressurizing the photoelectric material to enable the interior of the sample cavity to reach preset pressure; irradiating near-infrared laser onto the photoelectric material through the diamond, controlling whether illumination exists or not, and displaying a current-time curve under preset pressure by using a digital source meter; and determining a photoelectric spectrum response range according to the plurality of current-time curves under different preset pressures. The response range of the photoelectric material is widened, and the application field of the photoelectric detector is expanded.

Description

technical field [0001] The invention relates to the field of pressure regulation and control of photoelectric material properties, in particular to a method and system for regulation and control of photoelectric spectral response range. Background technique [0002] As the core component of the optoelectronics industry, photodetectors are widely used in many fields such as optoelectronic display, optical communication, imaging, and security inspection. With the development of society, photodetectors with high responsivity, high detection rate and wide spectral response range have become an urgent need for future development. However, the application fields of existing photodetectors are often limited by the band gap of optoelectronic materials. Due to the large band gap of optoelectronic materials, the spectral response range of optoelectronic materials is narrow and the detection band is small, which limits the application field of photodetectors. Therefore, expanding the ...

Claims

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Application Information

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IPC IPC(8): G01N21/01G01N21/27
CPCG01N21/01G01N21/27H01L27/14649G01J1/42G01J2001/444H04N5/33
Inventor 李全军李宗伦李海燕刘冰冰
Owner JILIN UNIV