Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Dual-beam cavity-backed antenna based on artificial electromagnetic structure and cavity odd-mode excitation

A dual-beam, odd-mode technology, applied in the field of dual-beam cavity-backed antennas, can solve the problems of reducing antenna profile, radiation asymmetry, narrow bandwidth, etc., and achieve the effect of simple feeding structure, good radiation performance, and beam width compression.

Active Publication Date: 2022-05-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF15 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method greatly reduces the profile of the antenna, has the advantages of light weight and small size, and is easy to realize the miniaturization of the antenna, but there are problems such as narrow bandwidth and asymmetric radiation.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dual-beam cavity-backed antenna based on artificial electromagnetic structure and cavity odd-mode excitation
  • Dual-beam cavity-backed antenna based on artificial electromagnetic structure and cavity odd-mode excitation
  • Dual-beam cavity-backed antenna based on artificial electromagnetic structure and cavity odd-mode excitation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] This embodiment provides an ultra-wideband, low sidelobe, dual-beam cavity-backed antenna based on cavity odd-mode excitation, and its overall structure schematic diagram is as follows figure 1 As shown in (a), it includes a metal block, a lower metal layer 4, a dielectric substrate 6 and an upper metal layer 5; the lower metal layer is located on the upper surface of the metal block and on the lower surface of the dielectric substrate; the upper metal layer is located on the upper surface of the dielectric substrate Surface; the centers of the metal block, lower metal layer, dielectric substrate and upper metal layer coincide; the side lengths of the lower metal layer, upper metal layer and dielectric substrate are the same (90mm×100mm), and are longer than the side length of the metal block.

[0043] The schematic diagram of the structure of the metal block is shown in figure 1 As shown in (d), two mirror-symmetrical rectangular back cavities 1 and 2 with a depth of 5...

Embodiment 2

[0057] This embodiment provides a broadband, low sidelobe, high gain, dual-beam cavity-backed antenna based on artificial electromagnetic structure and cavity odd-mode excitation technology. Based on the antenna described in Embodiment 1, the thickness of the dielectric substrate is modified It is 1.5mm, and it is used as the primary radiation source, and a transmissive metasurface composed of 9×9 metasurface elements is loaded directly above the antenna to compress the beam width and increase the far-field gain of the antenna.

[0058] The dielectric substrate 6 is made of Arlon IsoClad 917, with a relative permittivity of 2.17, a loss tangent of 0.0013, and a thickness of 1.5mm.

[0059] The top view of the transmissive metasurface is shown as Figure 4 As shown in (b), it consists of 9×9 metasurface units. The transmissive metasurface is placed directly above the antenna, and its lower surface is separated from the upper metal layer 5 by 20 mm.

[0060] The schematic diag...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses two double-beam cavity-backed antennas based on cavity odd-mode excitation, and belongs to the technical field of microwave antennas. The antenna of the present invention realizes symmetrical double-beam radiation in the far field of the antenna by using a symmetrical H-shaped microstrip line embedded in the substrate integrated waveguide for feeding; Chip integrated waveguide greatly increases the antenna bandwidth and reduces the side lobe level of the antenna. Compared with the existing multi-beam antenna technology, this method has a simple feeding structure and low processing cost. The antenna has a relative bandwidth of 41%, the double-beam radiation is symmetrical and the side lobe level is less than -15dB, and the antenna performance is excellent. Furthermore, by loading a metasurface with an appropriate phase distribution directly above the antenna, the wavefront phase of the primary radiation of the antenna is compensated, and the compression of the beam width and the improvement of the far-field gain are realized.

Description

technical field [0001] The invention belongs to the technical field of microwave antennas, in particular to a double-beam cavity-backed antenna based on an artificial electromagnetic structure and cavity odd-mode excitation. Background technique [0002] With the rapid development of wireless communication technology and intelligence and the rapid growth of mobile users, how to find new ways to improve network capacity has become a research hotspot. Since the multi-beam antenna can generate multiple directional beams in a single aperture at the same time, it can reduce the number of antennas required, and realize frequency reuse, which doubles the communication capacity and channel utilization; the multi-beam antenna has narrow beams and high gain Advanced characteristics, it has strong anti-interference ability, can greatly increase the distance of wireless communication, therefore, multi-beam antenna is widely used in satellite communication, mobile communication, radar an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01Q1/38H01Q1/50H01Q13/08H01Q15/00H01Q3/30
CPCH01Q1/38H01Q1/50H01Q13/08H01Q15/0086H01Q3/30
Inventor 何润民邵维金富隆
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products