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Amplifier biasing circuit with enabling control

A bias circuit, amplifier technology, applied in power amplifiers, improving amplifiers to reduce nonlinear distortion, etc.

Pending Publication Date: 2021-07-30
芜湖麦可威电磁科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the bias circuit based on the HBT amplifier cannot be controlled to turn off by simply pulling down the gate voltage. This application designs an amplifier bias circuit with enable control for the HBT amplifier based on the HBT process

Method used

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  • Amplifier biasing circuit with enabling control
  • Amplifier biasing circuit with enabling control
  • Amplifier biasing circuit with enabling control

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Embodiment Construction

[0018] The specific implementation manner of the present invention will be described in further detail below by describing the best embodiment with reference to the accompanying drawings.

[0019] There are mainly two types of transistor technology developed based on GaAs materials: Field Effect Transistor (FET) and Bipolar Transistor (BJT). The main representatives of the former are MESFET and pHEMT, and the main representatives of the latter are HBT, such as figure 1 As shown, the amplifier and its bias control circuit implemented by a field effect collective transistor FET, the control circuit only uses a FET transistor FET1 to pull down the base voltage of FET2 to realize shutdown or startup, and when the transistor is not a FET transistor but HBT transistor, that is, bipolar transistor heterojunction bipolar transistor, such as figure 2 As shown, the FET transistor is replaced by an HBT transistor. This kind of HBT1 is used as the bias control circuit of the driving ampl...

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Abstract

The invention discloses an amplifier biasing circuit with enabling control, which comprises an enabling signal input circuit, a reference voltage input end, a transistor HBT3, a transistor HBT4, a transistor HBT5 and a transistor HBT6, and is characterized in that the enabling signal input circuit is connected with a base electrode of the HBT3; a reference voltage input end VREF is connected to a collector electrode of the transistor HBT3 through a resistor R5; the emitting electrode of the transistor HBT3 is connected with the collecting electrode of the transistor HBT4, the base electrode of the transistor HBT4 and the base electrode of the transistor HBT6; the emitter of the transistor HBT4 is respectively connected with the collector and the base of the HBT5; the emitter of the transistor HBT5 is grounded; a collector electrode of the transistor HBT6 is connected with a reference voltage input end VREF; and an emitting electrode leading-out terminal of the transistor HBT6 is used for outputting bias current to control the opening and closing of the amplifier. The amplifier bias circuit has the advantages that the bias circuit has an enabling control function, work of the bias circuit can be controlled according to the enabling control function, and bias current can be linearly adjusted within a large range through a reference voltage end.

Description

technical field [0001] The invention relates to the field of amplifier drive control, in particular to an amplifier bias circuit with enable control. Background technique [0002] Gallium arsenide (GaAs) is a new generation of wide-bandgap semiconductor materials, belonging to III-V compound semiconductors, which entered the practical stage in 1964. Gallium arsenide can be made into a semi-insulating high-resistance material whose resistivity is more than 3 orders of magnitude higher than that of silicon and germanium, and is used to make integrated circuit substrates, infrared detectors, gamma photon detectors, etc. Because its electron mobility is 5 to 6 times larger than that of silicon, it has been widely used in the manufacture of microwave devices and high-speed digital circuits. Semiconductor devices made of gallium arsenide have the advantages of high frequency, high temperature, low temperature performance, low noise, and strong radiation resistance. There are mai...

Claims

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Application Information

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IPC IPC(8): H03F1/32H03F3/20
CPCH03F1/32H03F3/20
Inventor 许欢冷益平余锐
Owner 芜湖麦可威电磁科技有限公司
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