A preparation method of embedded three-dimensional nanowire helical structure grown across the surface
A three-dimensional nano and helical structure technology, applied in nanostructure manufacturing, specific nanostructure formation, nanotechnology, etc., can solve the problems of small-scale sample sensitivity and low spatial resolution, and achieve the effect of simple operation process and simple operation
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Embodiment 1
[0038] as attached figure 2 As shown, it is a flow chart of the preparation process for the preparation of embedded cross-surface grown three-dimensional nanowire spirals, and the preparation method includes the following steps:
[0039] 101. Use photolithography technology to perform patterning on the backside of the substrate 1 to leave an etching area, and perform a thinning process on the substrate 1 with a wet etching process, so that the unetched height remains at 2-3 μm, and then A layer of high melting point metal material is deposited as the bottom electrode 4, and the back photoresist is washed away;
[0040] 102. After step 101, pattern design is performed on the front surface of the substrate 1 by using the photolithography technology, and the guide channel is etched, and then secondary photolithography is performed, leaving a planar cylindrical photoresist array;
[0041] 103. After step 102, deposit a high melting point metal layer of the same or different type...
Embodiment 2
[0058] This embodiment is carried out on the basis of the above-mentioned Embodiment 1, and the similarities with Embodiment 1 will not be repeated.
[0059] In this embodiment, silicon is used as the substrate 1 and the patterned metal electrode is used as the mask, and the substrate 1 is etched by the ICP etching process to obtain a cylindrical well structure with regular grooves. Metal nanoparticle-induced planar nanowires (IPSLS) growth technology can obtain nanowire helical structures 3 grown along the sidewalls of cylindrical wells, realize embedded cross-surface growth, and realize electrical loops through effective electrical connections.
[0060] as attached figure 1 As shown, it is a schematic diagram of an embedded cross-surface growing three-dimensional nanowire helical structure, which includes a substrate 1, a top electrode 2, a three-dimensional nanowire helical structure 3 and a bottom electrode 4, wherein the inner surface of the cylindrical well with the chan...
Embodiment 3
[0075] This embodiment is carried out on the basis of the above-mentioned embodiment 1 or 2, and the similarities with the embodiment 1 or 2 will not be repeated.
[0076] The difference of this embodiment is that the embedded cross-surface growth three-dimensional nanowire helical structure 3 is prepared using SOI as the substrate.
[0077] as attached Figure 5 As shown, it is a schematic diagram of the embedded cross-surface growth three-dimensional nanowire helical structure of this embodiment, and its structure is to use SOI as the substrate 1 or sequentially deposit 600nm SiO on the heavily doped silicon substrate 2 , Schematic diagram of embedded cross-surface growth of 3D nanowire helical structure prepared from 1-2 μm crystalline silicon material (amorphous silicon can also be annealed into crystalline silicon), including substrate 1, top electrode 2, 3D nanohelix structure 3 , bottom electrode 4, catalytic particle region 5 and SiO 2 Layer 6. The inner surface of ...
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