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Lead-free piezoelectric film material and preparation method thereof

A thin-film material and lead-free piezoelectric technology, applied in the field of lead-free piezoelectric thin-film materials and their preparation, can solve the problems of low strain and low piezoelectric performance of lead-free piezoelectric thin-film materials, and reduce loss and leakage current, dielectric The effect of reducing electrical loss and reducing oxygen vacancies

Pending Publication Date: 2021-08-17
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the technical problems existing in the prior art, the present invention provides a lead-free piezoelectric thin film material and its preparation method to solve the technical problems of the existing lead-free piezoelectric thin film materials with low strain and piezoelectric performance

Method used

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  • Lead-free piezoelectric film material and preparation method thereof
  • Lead-free piezoelectric film material and preparation method thereof
  • Lead-free piezoelectric film material and preparation method thereof

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preparation example Construction

[0035] The present invention also provides a method for preparing a lead-free piezoelectric thin film material, which is prepared by a sol-gel method, specifically comprising the following steps:

[0036] Step 1. Select bismuth acetate, sodium acetate, tetrabutyl titanate, barium acetate and tetrabutyl zirconate as raw materials to prepare BNT-xBZ precursor solution; wherein, the concentration of BNT-xBZ precursor solution 0.3-0.4mol / L, the volume of the prepared solution is 30-40mL; due to the annealing process, the alkali elements Bi and Na are easy to volatilize, therefore, when weighing the raw materials, provide the acetic acid by an excess of 2%-5%. For bismuth, the sodium acetate is provided in excess of 5%-15%.

[0037] The preparation process of BNT-xBZ precursor solution is as follows:

[0038] First, measure 10-15mL of ethylene glycol methyl ether; then, weigh bismuth acetate, sodium acetate and barium acetate respectively; finally measure 10-15mL of acetic acid, h...

Embodiment 1

[0047] This embodiment 1 provides a lead-free piezoelectric thin film material, and the general chemical formula of the components of the lead-free piezoelectric thin film material is: (1-x)(Bi 0.5 Na 0.5 )TiO 3 -x%BaZrO 3 , where x=0.

[0048] The preparation method of the lead-free piezoelectric thin film material in Embodiment 1 specifically includes the following steps:

[0049] Step 1. Select the raw materials of bismuth acetate, sodium acetate, tetrabutyl titanate, barium acetate and tetrabutyl zirconate of analytical purity or above to prepare the BNT-0BZ precursor solution. The concentration of the precursor solution is 0.3mol / L. The volume of the solution is 30 mL; since the alkali metal elements Bi and Na are easily volatile during annealing, when bismuth acetate and sodium acetate are weighed, bismuth acetate is provided in excess of 2%, and sodium acetate is provided in excess of 5%.

[0050] Preparation process:

[0051] First, measure 10 mL of ethylene glyco...

Embodiment 2

[0062] This embodiment 2 provides a lead-free piezoelectric thin film material, and the general chemical formula of the components of the lead-free piezoelectric thin film material is: (1-x)(Bi 0.5 Na 0.5 )TiO 3 -x%BaZrO 3 , where x=4.

[0063] The preparation method of the lead-free piezoelectric thin film material in the embodiment 2 specifically includes the following steps:

[0064] Step 1. Select the raw materials of bismuth acetate, sodium acetate, tetrabutyl titanate, barium acetate and tetrabutyl zirconate of analytical purity or above to prepare the BNT-4BZ precursor solution. The concentration of the precursor solution is 0.35mol / L. The volume of the solution is 35mL; since the alkali metal elements Bi and Na are easily volatilized during annealing, when weighing bismuth acetate and sodium acetate, bismuth acetate is provided in excess of 3%, and sodium acetate is provided in excess of 10%.

[0065] Preparation process:

[0066] First, measure 10 mL of ethylene ...

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Abstract

The invention discloses a lead-free piezoelectric film material and a preparation method thereof. The chemical general formula of the lead-free piezoelectric film material is (1-x%) (Bi<0.5>Na<0.5>) TiO<3>-x% BaZrO<3>. The preparation method comprises the following steps: aging a BNT-xBZ precursor solution to obtain sol; uniformly spin-coating the sol on a substrate to obtain a wet film; pyrolyzing and sintering the wet film to obtain an intermediate film; on the intermediate film, repeating sol spin-coating, pyrolysis and sintering treatment, and obtaining a film with the preset thickness; and carrying out annealing heat treatment on the film with the preset thickness to obtain the lead-free piezoelectric film material. According to the invention, BaZrO3 is introduced into a (Bi < 0.5 > Na < 0.5 >) TiO < 3 > matrix, so that a unique morphotropic phase boundary, namely a relaxation-ferroelectric phase boundary, is constructed; the piezoelectric activity of the film component located at the relaxation-ferroelectric phase boundary is enhanced, and a reversible field-induced phase change effect is generated under the action of an electric field, so that the strain performance is remarkably improved, and the strain and piezoelectric properties of the film component far exceed those of an existing lead-based material.

Description

technical field [0001] The invention belongs to the technical field of lead-free functional film materials, in particular to a lead-free piezoelectric film material and a preparation method thereof. Background technique [0002] Micro-displacement technology is a very important high-precision technology used in micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS), mainly including micro-drivers and high-precision displacement devices; it uses the inverse piezoelectric properties of piezoelectric materials , which can realize high-precision electrical signal control displacement drive; the development trend of device miniaturization and miniaturization requires piezoelectric materials to develop from bulk to thin film; Electrical materials are mainly lead-based materials, such as lead zirconate titanate PZT; and the use of lead-based piezoelectric materials violates the requirements of green environmental protection and sustainable development. The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/49C04B35/475C04B35/622C04B35/624
CPCC04B35/49C04B35/475C04B35/62222C04B35/624C04B2235/3201C04B2235/3215C04B2235/662C04B2235/6583C04B2235/96C04B2235/95
Inventor 赵金燕王哲任巍郑坤全熠庄建王玲艳
Owner XI AN JIAOTONG UNIV
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