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Preparation process of integrated large-area two-dimensional material device

A technology of two-dimensional materials and preparation technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems that limit the development of chips, and achieve the effect of eliminating production steps and high processing efficiency

Active Publication Date: 2021-08-24
天津华慧芯科技集团有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, with the continuous reduction of chip size, the short channel effect and thermal effect are becoming more and more obvious. The above factors seriously limit the development of the chip industry. The development of new material systems and the preparation of related high-quality devices have become the current research hotspots of science and technology.

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  • Preparation process of integrated large-area two-dimensional material device

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Embodiment Construction

[0019] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is an embodiment of a part of the application, but not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the scope of protection of this application.

[0020] It should be noted that the terms "first" and "second" in the description and claims of the present application and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It should be understood that the data so used may be interchanged under appropriate circumstances for...

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Abstract

The invention discloses a preparation process of an integrated large-area two-dimensional material device, and belongs to the technical field of semiconductor processing. The process is characterized in that the process comprises at least comprising the following steps: S1, pretreatment; S2, gluing; S3, electron beam exposure; S4, developing; S5, etching; S6, gluing; S7, overlay; S8, evaporation; S9, stripping. The technical problems that the adsorption capacity of the two-dimensional material is not strong and the two-dimensional material is easy to fall off in the technological processes of developing, stripping and the like are solved by adopting an ingenious method of selecting proper photoresist and developing solution, directly making overlay marks by adopting the photoresist and directly coating the two-dimensional material without removing the photoresist after etching the two-dimensional material. In addition, compared with an ultraviolet lithography mode, an electron beam lithography mode is adopted, so the manufacturing step of a lithography mask plate is omitted, the method is very flexible and convenient, and has very high processing efficiency and nanoscale processing precision.

Description

technical field [0001] The invention belongs to the technical field of semiconductor processing, and in particular relates to a preparation process of an integrated large-area two-dimensional material device. Background technique [0002] In recent years, with the rapid development of science and technology, various advanced devices based on silicon-based materials have led the modern information technology revolution, and various advanced devices based on silicon-based materials have had an important impact on the progress of social science and technology. However, with the continuous reduction of chip size, the short channel effect and thermal effect are becoming more and more obvious. The above factors seriously limit the development of the chip industry. The development of new material systems and the preparation of related high-quality devices have become the current research hotspots of science and technology. As an important quantum material, two-dimensional materials...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027H01L21/04
CPCH01L21/042H01L21/0274
Inventor 王磊曲迪李宗宴李文喆陈帅
Owner 天津华慧芯科技集团有限公司
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