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Zero-bias photo gate photo detector

A photodetector, grating technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of detector background radiation insensitivity, limiting detector sensitivity, etc.

Inactive Publication Date: 2021-08-24
奥米德哈比波
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the detector becomes insensitive to background radiation
However, the applied gate voltage required to form a depletion layer generates leakage currents, which limits the sensitivity of such detectors

Method used

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  • Zero-bias photo gate photo detector

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Embodiment Construction

[0015] The invention will now be described in more detail herein below with reference to the accompanying drawings.

[0016] figure 1 Schematically shows a zero-bias grating photodetector 10 comprising: a first electrode consisting of amorphous germanium 12 covered with several atomic layers 11 of transition metal species; a second electrode 14 which is an n-type silicon layer and a dielectric layer 13 located between the first electrode and the second electrode; and a depletion layer 15 formed in the n-type silicon layer 14 at the interface with the dielectric layer 13 .

[0017] The material used to form the thin metal layer 11 is selected from transition metals Ni, Cr, Nb, Mo, Au, Pt, Fe, Cu, Ta, V, Co and W. Thus, metal alloys comprising two or more metals can be formed.

[0018] The thickness of the amorphous germanium 12 can be in the range of 5-200 nm, the thickness of the dielectric 13 can be in the range of 5-100 nm, and the thickness of the thin metal layer 11 can ...

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Abstract

A photo gate photo detector (10) comprising: a first electrode consisting of amorphous germanium (12) covered with transition metal species having a thickness in the range of 0.1-5 nm (11); a second electrode (14) which is an n-type silicon layer; and a dielectric layer (13) arranged between the first and second electrode; with a depletion layer (15) formed in the n-type silicon layer (14) at the interface to the dielectric layer (13).

Description

technical field [0001] The present invention relates to a silicon-based zero-bias grating photodetector. In particular, the present invention significantly reduces leakage current and improves sensitivity. Background technique [0002] A grating detector is a metal-oxide-semiconductor (MOS) capacitor with polysilicon as the top terminal, called the gate. A DC voltage is applied to the gate to form a depletion layer of ionized dopants near the surface beneath the gate. In the depletion layer, an electric field is established that allows the separation of electron-hole pairs generated by absorbed photons. This type of photodetector converts a light signal into a stored charge rather than a voltage or current signal. With appropriate external circuitry, the stored charge can be converted into a voltage or current signal. [0003] By applying a pulsed light signal, rather than a continuous signal, we can charge and discharge the grating and generate a current equal to the ra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/028H01L31/101
CPCH01L31/112H01L31/0224
Inventor 奥米德·哈比波
Owner 奥米德哈比波