A Process Method for Improving the Consistency of Epitaxial Wafer Transition Region
A process method and technology of the transition zone, which is applied in the field of silicon epitaxial wafers, the basic semiconductor material, can solve problems such as the influence of the consistency of the edge transition zone and the impact on the device casting results, and achieve the effect of improving the consistency of the transition zone and reducing the deviation
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Embodiment 1
[0027] In the first embodiment, a preparatory substrate sheet with a resistivity of 0.002 Ω·cm is selected. In the first section, the variable doping mode is used to select the change interval as 15% of the total thickness, corresponding to a resistivity of 0.1Ω·cm. The doping amount in the second stage is constant, and the doping amount setting value is the doping amount corresponding to the target resistivity of the epitaxial layer. During the epitaxial growth process, the growth temperature is 1040°C, and the growth rate is 2.3µm / min, which can combine figure 2 It can be seen from the longitudinal structure diagram of the center and edge resistivity of the middle and epitaxial wafers. The longitudinal structure diagram of the center and edge resistivity of the epitaxial wafer is as follows. It can be obtained from the test that the percentage deviation of the center and edge transition regions in the wafer to the total epitaxial thickness is about 13%.
Embodiment 2
[0028] In the second embodiment, a preparatory substrate sheet with a resistivity of 0.003 Ω·cm is selected. In the first section, the variable doping mode is used to select the change interval as 25% of the total thickness, corresponding to a resistivity of 0.3Ω·cm. The doping amount in the second stage is constant, and the doping amount setting value is the doping amount corresponding to the target resistivity of the epitaxial layer. During the epitaxial growth process, the growth temperature is 1050°C, and the growth rate is 2.5µm / min, which can combine image 3 It can be seen from the longitudinal structure diagram of the center and edge resistivity of the middle and epitaxial wafers. It can be obtained from the test that the percentage deviation of the center and edge transition regions in the chip to the total epitaxial thickness is about 1%.
Embodiment 3
[0029] In the third embodiment, a preparatory substrate sheet with a resistivity of 0.004Ω·cm is selected. The first section adopts the mode of variable doping to select the change interval as 30% of the total thickness, corresponding to a resistivity of 0.5Ω·cm. The doping amount in the second stage is constant, and the doping amount setting value is the doping amount corresponding to the target resistivity of the epitaxial layer. During the epitaxial growth process, the growth temperature is 1060°C, and the growth rate is 2.8µm / min, which can combine Figure 4 It can be seen from the longitudinal structure diagram of the center and edge resistivity of the middle and epitaxial wafers. It can be obtained from the test that the percentage deviation of the center and edge transition regions in the chip to the total epitaxial thickness is about 4%.
[0030] As a comparative example of the prior art, under the existing process conditions, it can be combined Figure 5 The center...
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