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Passivation contact structure and preparation method and application thereof

A contact structure, passivation layer technology, applied in the field of solar cells, can solve the problems of reducing cell efficiency, tunnel oxide layer damage, passivation performance degradation, etc., to achieve good integrity, reduce band gap, and prevent passivation. Effect

Pending Publication Date: 2021-09-03
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problem that the tunneling oxide layer of the existing TOPCon structure is easily damaged to a certain extent under high temperature conditions, resulting in a decline in passivation performance and reducing battery efficiency, a passivation contact structure and its preparation method and application are provided.

Method used

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  • Passivation contact structure and preparation method and application thereof
  • Passivation contact structure and preparation method and application thereof
  • Passivation contact structure and preparation method and application thereof

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Embodiment 1

[0048] This embodiment provides a passivation contact structure, which includes a substrate 1 , a silicon oxycarbide passivation layer 2 and a doped polysilicon layer 3 are sequentially integrated on one surface of the substrate 1 .

[0049] Specifically, in this embodiment, the substrate 1 is an n-type crystalline silicon substrate 1 , and the doped polysilicon layer 3 is doped with phosphorus.

[0050] Further, the thickness of the silicon oxycarbide passivation layer 2 is 0.5-5nm, the doped oxygen atom content in the silicon oxycarbide passivation layer 2 is 5at%-50at%, and the doped carbon atom content is 0.1at%-20at% .

[0051] Specifically, the doped carbon atom content in the silicon oxycarbide passivation layer 2 is 0.1 at%, 1 at%, 5 at%, 10 at% or 20 at%, and in this embodiment, the doped carbon atom content is 10 at%.

[0052] Specifically, in order to effectively collect carriers, the silicon oxycarbide passivation layer 2 has a thickness of 1-3 nm, and the heavily...

Embodiment 2

[0061] Such as figure 1 As shown, this embodiment discloses a method for preparing a passivation contact structure, which is used to prepare the passivation contact structure in Embodiment 1. The preparation method includes sequentially preparing a silicon oxycarbide passivation layer 2 and a doped polysilicon precursor on one surface of a substrate 1 , and then performing high-temperature annealing and crystallization, and the doped polysilicon precursor forms a doped polysilicon layer 3 .

[0062] Further, the annealing temperature range is 800-1100°C.

[0063] Specifically, preparing the silicon oxycarbide passivation layer 2 and the doped polysilicon precursor sequentially on one surface of the substrate 1 refers to first preparing a layer of silicon oxycarbide passivation layer 2 on one surface of the substrate 1, and then A layer of doped polysilicon precursor is prepared on the surface of the silicon oxycarbide passivation layer 2 .

[0064] Further, the high-temperat...

Embodiment 3

[0073] This embodiment provides an application of a passivation contact structure, and the passivation contact structure in Embodiment 1 is applied to a solar cell.

[0074] Specifically, the electrode 4 is prepared on the surface of the doped polysilicon layer 3 . In another embodiment, a polysilicon layer is prepared on the surface of the doped polysilicon layer 3 first, and then a layer of electrodes 4 is prepared on the surface of the polysilicon layer.

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Abstract

The invention discloses a passivation contact structure, which belongs to the field of solar cells and comprises a substrate, wherein a silicon oxycarbide passivation layer and a doped polycrystalline silicon layer are sequentially integrated on one surface or two surfaces of the substrate. According to the passivation contact structure provided by the embodiment of the invention, the silicon oxycarbide passivation layer is adopted to replace an existing ultrathin oxide layer, and due to the addition of carbon in the silicon oxycarbide passivation layer, an expansion coefficient of a silicon oxycarbide passivation layer film can be adjusted, the stability of the silicon oxycarbide passivation layer film is improved, and the integrity of the silicon oxycarbide passivation layer film is ensured. The embodiment of the invention further provides a preparation method of the passivation contact structure, the silicon oxycarbide passivation layer is adopted to replace the existing ultrathin oxide layer, under the long-time high-temperature condition, hydrogen at the interface of the silicon oxycarbide passivation layer is not prone to being released outwards, and doping atoms in doped polycrystalline silicon cannot be excessively diffused. The embodiment of the invention further provides application of the passivation contact structure, the passivation contact structure is applied to a solar cell, and the cell efficiency is improved.

Description

technical field [0001] The invention relates to the field of solar cells, more specifically, to a passivation contact structure and its preparation method and application. Background technique [0002] Tunnel Oxide Passivated Contact Structures (TOPCon, Tunnel Oxide Passivated-Contact structures) is a new type of crystalline silicon solar cell structure first proposed by the German Fraunhofer Institute in 2014, aiming to improve the passivation of the back of the silicon cell. Specifically, using an n-type silicon wafer as a substrate, first grow a layer of ultra-thin silicon oxide with a thickness of less than 3nm on the back of the silicon wafer using hot nitric acid, and then prepare a layer of phosphorus-doped amorphous silicon, which is crystallized by high-temperature annealing , achieving excellent passivation properties. The excellent passivation performance comes from two aspects, one: the ultra-thin silicon oxide on the surface can effectively passivate the dangli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/0224H01L31/068H01L31/18
CPCH01L31/02167H01L31/022441H01L31/0682H01L31/1804H01L31/1868H01L31/1864Y02P70/50Y02E10/546Y02E10/547
Inventor 叶继春曾俞衡闫宝杰刘尊珂廖明墩马典韩庆玲程皓郑晶茗刘伟
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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