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Photosensitive array, manufacturing method and imaging device

A photosensitive array and manufacturing method technology, applied in the photosensitive field, can solve the problems of lack of crosstalk reduction, etc., and achieve the effects of reduced crosstalk, small pixel size, and high-quality photosensitive imaging

Pending Publication Date: 2021-09-07
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to obtain a smaller-sized photosensitive array (the radial dimension of the pixel area is, for example, less than 1 μm, correspondingly, the spacing between pixels is also small), there is still a lack of substrates that can effectively reduce crosstalk and at the same time facilitate the application of each pixel. array structure for equipotential operation

Method used

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  • Photosensitive array, manufacturing method and imaging device
  • Photosensitive array, manufacturing method and imaging device
  • Photosensitive array, manufacturing method and imaging device

Examples

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Effect test

Embodiment 1

[0039] Embodiment 1: photosensitive array

[0040] The photosensitive array of the embodiment of the present invention adopts the pixel structure of the dual-transistor photosensitive detector disclosed in Chinese patent CN102938409A, which is hereinafter referred to as a vertical-transferring-charge pixel sensor (VPS). figure 1 It is a schematic plan view of the vertical charge photosensitive device used in the photosensitive array of the embodiment of the present invention. figure 2 It is a schematic diagram of the cross-sectional structure and electrical connection of the vertical charge photosensitive device used in the photosensitive array of the embodiment of the present invention. figure 2 The cross-sectional structure on the left side of the center can be seen as figure 1 Schematic diagram of the cross-sectional structure of the middle AB section, figure 2 The cross-sectional structure on the right side of the middle can be seen as figure 1 Schematic diagram of t...

Embodiment 2

[0074]Embodiment 2: Manufacturing method of photosensitive array

[0075] The manufacturing method of the photosensitive array described below can be used to manufacture the photosensitive array as described in the first embodiment. The manufacturing method mainly includes a first step of providing a substrate and a second step of forming an isolation structure in the substrate.

[0076] In the first step, before or after the isolation structure is formed, the substrate may be formed as a substrate with a lower doping concentration, for example, with p-type shallow doping, where p-type is used as the first conductivity type. refer to Figures 1 to 6C , wherein the substrate is preset with a plurality of pixel regions 100 arranged in rows and columns and a substrate lead-out region 200 distributed between the plurality of pixel regions 100, each of the pixel regions 100 includes a The photosensitive region 110 of the MOS capacitor in the above-mentioned vertical charge photos...

Embodiment 3

[0092] Embodiment Three: Imaging Device

[0093] Embodiments of the present invention also relate to an imaging device, which includes the photosensitive array described in the above embodiments. The imaging device may be a device using the photosensitive array and having an imaging function, for example, an image sensor including the above photosensitive array. In addition to the photosensitive array, the imaging device may also include a data processing unit and / or an image output unit that cooperates with the photosensitive array, so as to analyze the information related to the photogenerated charge obtained by each pixel in the photosensitive array. The data is processed and formed into an image. Since the arrangement of the above-mentioned photosensitive array facilitates equipotential operation on the substrate of each pixel when the photosensitive array is working, and the crosstalk between pixels is small, in addition, the photosensitive array uses MOS capacitors and ...

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Abstract

The invention relates to a photosensitive array, a manufacturing method and an imaging device. Each pixel area in the photosensitive array corresponds to one substrate leading-out area and is communicated with a substrate of the corresponding substrate leading-out area, and the plurality of rows of pixel areas comprise two adjacent rows of pixel areas of which charge reading areas are arranged face to face and photosensitive areas are arranged away from each other. The substrate leading-out areas corresponding to the pixel areas in the two adjacent columns of pixel areas are arranged in column gaps of the two adjacent column pixel areas, and a voltage can be applied to the substrates of the pixel areas corresponding to the substrate leading-out areas through the substrate leading-out areas so that equipotential operation can be carried out conveniently. Moreover, in the two adjacent columns of pixel areas, the photosensitive areas of the pixel areas in the same column are separated by a full isolator penetrating through the substrate in the thickness direction, so that cross-talk can be reduced. The photosensitive array can be obtained by adopting the manufacturing method provided by the invention. The imaging device comprises the photosensitive array.

Description

technical field [0001] The invention relates to the field of photosensitive technology, in particular to a photosensitive array, a manufacturing method and an imaging device. Background technique [0002] At present, the photosensitive technology that has been applied is distinguished from the principle, mainly CCD (charge coupled device) and CMOS (complementary metal oxide semiconductor), among which CMOS has faster imaging speed and better system integration ability than CCD. Lower power consumption can be achieved. However, each pixel in a photosensitive array of an image sensor implemented by CMOS usually includes at least one photodiode and three to six transistors, so that the ratio of the photosensitive area is relatively small. With the development of technology, the demand for increasing the number of pixels per unit area is more urgent, so the area of ​​a single pixel is designed to be smaller and smaller, and the full well charge of CMOS pixels is low, which lead...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L27/148
CPCH01L27/14609H01L27/1463H01L27/14632H01L27/14643H01L27/14687H01L27/14689H01L27/14806H01L27/14868
Inventor 曹开玮孙鹏
Owner WUHAN XINXIN SEMICON MFG CO LTD
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