NMOS device manufacturing method for improving stress film coverage uniformity, and NMOS device thereof

Abstract

The invention discloses an NMOS device manufacturing method for improving the stress film coverage uniformity. The method comprises the following steps: S1, providing a substrate, forming at least two grid electrodes on the substrate, arranging a first hard mask layer and a second hard mask layer on each grid electrode, and arranging a first side wall and a second side wall on two sides of each grid electrode, wherein the substrate further comprises a source electrode and a drain electrode; S2, carrying out ion implantation on the source electrode and the drain electrode; S3, thinning the second side wall; S4, depositing a stress film; S5, carrying out rapid thermal annealing on the stress film; S6, removing the stress film; and S7, removing the hard mask layer; and removing the first hard mask layer and the second hard mask layer on the grid electrodes.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor integrated circuit, in particular to a manufacturing method of an NMOS device and a MOS device thereof for improving the coverage uniformity of a stress film. Background technique [0002] In the field of semiconductor manufacturing, improving the carrier mobility of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has always been a hot topic; nowadays, the industry usually introduces stress engineering or adopts incapable Semiconductor material communication and other methods are used to improve the mobility of carriers (electrons) in N-channel field-effect transistors (NMOS), but with the further shrinking of the device size, the gap between the gates is getting smaller and smaller, and the stress film (SMT SIN ) coverage uniformity (Step Coverage) is getting worse, such as figure 1 , greatly reducing the stress transmission. The current conventional method to improve cove...

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Problems solved by technology

[0002] In the field of semiconductor manufacturing, improving the carrier mobility of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has always been a hot topic; nowadays, the industry usually introduces stress engineering or adopts incapable Semiconductor material communication and other methods are used to improve the mobility of carriers (electrons) in N-channel field-effect transistors (NMOS), but with the further shrinking of the device size, the gap between the gates is getting smaller and smaller, and the stress film (SMT SIN ) coverage uniformity (Step Coverage) is getting worse, such as figure 1 , greatly reducing the stress transfer

The current conventional method to improve coverage uniformity is to reduce the growth rate of the stressed film, but this will reduce the stress of the stressed film

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