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SE double-sided PERC battery adopting MBB main gate structure and preparation method of SE double-sided PERC battery

A grid structure and battery technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem of low photoelectric conversion utilization rate, and achieve the effects of improving photoelectric conversion utilization rate, improving open circuit voltage, and increasing system power generation gain.

Pending Publication Date: 2021-09-17
TONGWEI SOLAR ENERGY CHENGDU CO LID
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is: in order to solve the technical problem of the low photoelectric conversion utilization rate of the existing single-sided PERC battery, the present invention provides an SE double-sided PERC battery with MBB busbar structure and its preparation method

Method used

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  • SE double-sided PERC battery adopting MBB main gate structure and preparation method of SE double-sided PERC battery

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Embodiment 1

[0031] like figure 1 As shown, this embodiment provides a SE double-sided PERC battery adopting MBB busbar structure, comprising a silicon substrate 4 made of textured surface, and the back surface of the silicon substrate 4 is deposited with a back passivation layer 3 and a back subtraction layer in sequence. The reflection passivation protection film layer 2, the surface of the back anti-reflection passivation protection film layer 2 is screen-printed with multi-busbar rear electrode patterns and laser grooves, the grooves are provided with grid electrodes 1, and the front surface of the silicon substrate 4 is deposited with N N-type doped layer 5 and front anti-reflection passivation protective film layer 6, N-type doped layer 5 is provided with N+ type heavily doped region 8, the surface of front anti-reflection passivation protective film layer 6 is screen-printed with multi-busbar front electrode Figure, the front electrode of the multi-busbar battery is provided with an...

Embodiment 2

[0038] A method for preparing an SE double-sided PERC battery using an MBB busbar structure, characterized in that it comprises the following steps:

[0039] Step 1, using a compound chemical etching solution to perform pre-cleaning and surface texturing of the silicon substrate;

[0040] Step 2. Place the silicon substrate in step 1 in a tubular diffusion furnace at 840°C to 870°C, diffuse the silicon substrate with a POCl3 liquid source, and produce high-impurity Concentrated PSG layer and 160±8Ω sheet resistance, the uniformity of front impurity diffusion concentration is less than 5%;

[0041] Step 3, using laser irradiation with a wavelength of 532nm, designing an SE laser doping pattern according to the front electrode pattern of the multi-busbar battery, performing localized laser ablation, and realizing heavy doping of phosphorus in the irradiation area of ​​the silicon wafer. Form an N-type high-concentration emitter, and prepare a preliminary selective emitter junct...

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Abstract

The invention discloses an SE double-sided PERC battery adopting an MBB main gate structure and a preparation method of the SE double-sided PERC battery, and relates to the technical field of new energy material photovoltaic power generation. The SE double-sided PERC battery comprises a silicon substrate with a textured surface; a back passivation layer and a back antireflection passivation protection film layer are sequentially deposited on the back surface of the silicon substrate, a multi-main-grid back electrode pattern is printed on the surface of the back antireflection passivation protection film layer in a silk-screen mode, a groove is formed through laser, the groove is provided with a grid electrode, an N type doping layer and a front antireflection passivation protection film layer are deposited on the front surface of the silicon substrate, the N type doping layer is provided with an N+ type heavily doped region, a multi-main-grid battery front electrode pattern is silk-printed on the surface of the front antireflection passivation protective film layer, and an Ag positive electrode connected with the N+ type heavily doped region is arranged on the multi-main-grid battery front electrode pattern. The battery has the advantages of being simple in structure and improving the photoelectric conversion efficiency of the prepared battery.

Description

technical field [0001] The present invention relates to the technical field of photovoltaic power generation of new energy materials, and more specifically relates to the technical field of an SE double-sided PERC battery adopting an MBB busbar structure and a preparation method thereof. Background technique [0002] Photovoltaic power generation is a renewable energy utilization method that converts solar energy into electrical energy through the photovoltaic effect of semiconductors and then supplies it to users. Photovoltaic power generation can reduce the proportion of petrochemical energy used, thereby reducing carbon emissions and improving the environment. After more than ten years of technical catching up, it has gradually become an emerging strategic manufacturing industry that can rival developed countries such as Europe, America, and Japan; but due to the current low light utilization rate The cost of technical routes and equipment and auxiliary materials is high....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/068H01L31/0224H01L31/0216H01L31/18
CPCH01L31/0684H01L31/022425H01L31/022433H01L31/02168H01L31/1804H01L31/1868Y02P70/50Y02E10/547
Inventor 陈坤谢毅苏荣李书森管潇弦李忠涌王岚王璞李兵川张静全李卫
Owner TONGWEI SOLAR ENERGY CHENGDU CO LID
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