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Fast axis collimating lens of semiconductor laser, forming method and light emitting system

A technology of collimating lens and emission system, applied in lens, radio wave measurement system, optics, etc., can solve problems such as high environmental requirements, low production efficiency, complex process, etc.

Pending Publication Date: 2021-09-24
HESAI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Grinding and polishing is a traditional mechanical processing method, which has low production efficiency, high cost, and is difficult to produce in large quantities; the molding method will reduce the glass transition temperature (T g ) glass is heated in a mold, and then embossed, the precision is not high enough, and the size of the lens after processing is not small enough; the photolithography method uses ultraviolet light to etch the photoresist, and transfers the characteristic pattern to the mask layer. The process is more complicated. High environmental requirements

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  • Fast axis collimating lens of semiconductor laser, forming method and light emitting system
  • Fast axis collimating lens of semiconductor laser, forming method and light emitting system
  • Fast axis collimating lens of semiconductor laser, forming method and light emitting system

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Embodiment Construction

[0058] It can be seen from the background art that the fast-axis collimating lens of the semiconductor laser in the prior art has the problem of poor collimating effect.

[0059] In order to solve the technical problem, the present invention provides a fast-axis collimating lens for a semiconductor laser, comprising: a base having a first surface facing away from the semiconductor laser; a first fast-axis collimating part, The first fast-axis collimating portion is located on the first surface, and the refractive index of the first fast-axis collimating portion is different from that of the base portion; the first fast-axis collimating portion is suitable for transmitting The light beam generated by the semiconductor laser compresses the divergence angle of the light beam in the first direction.

[0060] According to the technical solution of the present invention, the material of the first fast-axis collimating part and the base part can be selected according to the specific ...

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Abstract

The invention discloses a fast axis collimating lens of a semiconductor laser, a forming method and a light emitting system. The fast axis collimating lens comprises a base part which is provided with a first surface, a first fast axis collimating part which is positioned on the first surface, and the refractive index of the first fast axis collimating part is different from that of the base part; the first fast axis collimating part is suitable for transmitting a light beam generated by the semiconductor laser and compressing a divergence angle of the light beam in a first direction. According to the invention, appropriate materials of the first fast axis collimating part and the base part can be selected according to specific optical path design, the flexibility of setting can be effectively improved, the limitation of the fast axis collimating lens on the optical path design is broken through, and the assembly difficulty is reduced and the collimation effect is improved.

Description

technical field [0001] The invention relates to the field of laser radar, in particular to a fast-axis collimating lens for semiconductor lasers, a forming method, and a light emitting system. Background technique [0002] Lidar is a commonly used ranging sensor, which has the characteristics of long detection distance, high resolution, and low environmental interference. It is widely used in intelligent robots, drones, unmanned driving and other fields. LiDAR works by using the time it takes for light to travel back and forth between the radar and the target to obtain distance information about the target. [0003] In lidar, the light source is usually a semiconductor laser. Among them, the cross-sectional shape of the light beam formed by a certain type of semiconductor laser perpendicular to the laser propagation direction is not circular. Such as figure 1 As shown, the light-emitting region 11 of the edge-emitting laser (Edge-Emitting Lasers, EEL) 10 usually forms dif...

Claims

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Application Information

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IPC IPC(8): G02B3/06G02B27/30G01S7/481
CPCG02B3/06G02B27/30G01S7/481
Inventor 周权吴世祥张辰琛向少卿
Owner HESAI TECH CO LTD
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