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Processing method for regenerated light-transmitting blankmask and manufacturing method for blankmask

A technology of a light-transmitting substrate and a processing method, which is applied to manufacturing tools, laser welding equipment, ion implantation and plating, etc., can solve the problems of complex process and long-term operation, and achieve the effect of reducing manufacturing cost and realizing recyclability.

Pending Publication Date: 2021-10-01
SHANGHAI CHUANXIN SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a processing method for a regenerated mask light-transmitting substrate and a method for manufacturing a mask base plate, which are used to solve the problems in the prior art in order to remove the light-transmitting substrate. Mask materials need to go through various processes and additional processes, not only the process is complicated, but also the problem of long-term work

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  • Processing method for regenerated light-transmitting blankmask and manufacturing method for blankmask
  • Processing method for regenerated light-transmitting blankmask and manufacturing method for blankmask
  • Processing method for regenerated light-transmitting blankmask and manufacturing method for blankmask

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Embodiment 1

[0045] Such as Figure 1 to Figure 4 As shown, this embodiment provides a processing method for regenerating a masked light-transmitting substrate, and the processing method includes the steps of:

[0046] Such as figure 1 As shown, step 1) is performed first, and a mask base plate is provided, and the mask base plate includes a light-transmitting substrate 101 and a mask material layer 102 on the light-transmitting substrate 101 .

[0047] As an example, the transparent substrate includes one of a quartz substrate, a soda lime substrate, a borosilicate substrate, an aluminum silicate substrate, a silicon substrate, and a silicon carbide substrate, and the radial dimension of the transparent substrate 101 is between 1 Inch to 100 inches, thickness between 0.1mm and 200mm. For example, in this embodiment, the transparent substrate may be a quartz substrate, and its radial dimension may be 4 inches, 6 inches, 8 inches, 12 inches, etc.

[0048] The material of the mask materia...

Embodiment 2

[0060] Such as Figure 5 to Figure 9 As shown, the present embodiment provides a method for manufacturing a mask base, and the method for manufacturing includes the steps of:

[0061] Such as Figure 5 As shown, step 1) is firstly performed to provide a regenerated masked light-transmitting substrate manufactured by the processing method for regenerating a masked light-transmitting substrate described in Embodiment 1.

[0062] Such as Figure 6 As shown, step 2) is then performed to deposit a light-shielding film 202 on the light-transmitting substrate of the regenerated mask.

[0063] For example, the light shielding film 202 includes one of CrN, CrC and CrCN.

[0064] Specifically, in this embodiment, a light-shielding film 202 is deposited on the light-transmitting substrate of the regenerated mask through a magnetron sputtering process, wherein the inert gas introduction part of the sputtering device is injected with 20-80 SCCM of argon (Ar) and helium ( He) 20~80SCCM,...

Embodiment 3

[0074] Such as Figure 10As shown, this embodiment provides a method for manufacturing a mask base, and the basic steps of the manufacturing method are as in Embodiment 2, wherein, the difference from Embodiment 2 is that: in the regeneration mask light-transmitting substrate Before depositing the light-shielding film 202, a step of depositing a phase-shift film 206 on the light-transmitting substrate of the regenerated mask is also included. Specifically, after removing part of the anti-reflection film 203, light-shielding film 202 and phase-shift film through an etching process, The phase shift film 206 protrudes from the side of the light shielding film 202 to form a phase shift region 207. By changing the phase of the exposure light in the phase shift region, the occurrence of defects such as "bottom stand" can be effectively avoided, and the masking effect can be improved. The resolution of the template version. In this embodiment, the phase shift film includes one of Mo...

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Abstract

The invention provides a processing method for a regenerated light-transmitting blankmask and a manufacturing method for a blankmask. The processing method comprises the steps that 1) the blankmask is provided, wherein the blankmask comprises a light-transmitting substrate and a mask material layer located on the light-transmitting substrate; and 2) the mask material layer is irradiated by laser to enable the mask material layer to generate sublimation reaction so as to remove the mask material layer from the light-transmitting substrate to form the regenerated light-transmitting blankmask. According to the processing method, a laser removal method is adopted, mask materials such as photoresist, a metal film and a metal compound film on the blankmask are simultaneously removed by using laser, a wet etching solution does not need to be used in the removal process, and the problems of high cost, long process time, environmental pollution and the like of wet etching are solved; and the regenerated light-transmitting blamkmask obtained after processing has the same performance as the original light-transmitting substrate, so that recycling of the light-transmitting substrate is effectively achieved.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a processing method of a regenerated mask light-transmitting substrate and a manufacturing method of a mask base plate. Background technique [0002] Semiconductor elements require a fine circuit pattern (Pattern) process on a semiconductor substrate. For fine circuit patterning process, photomask is an essential component. In the manufacture of semiconductors and flat panel displays, the mask base is used as the base plate before the mask is patterned, and the material that carries the information of the circuit master is the core component of the lithography process (Lithography). [0003] Not only in the semiconductor field, but also in various technical fields such as LCD and OLED, the frequency of use of photomasks and mask blanks is also increasing rapidly. Used photomasks and mask bases are generally discarded after being used once, and the number o...

Claims

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Application Information

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IPC IPC(8): B23K26/36C23C14/04C23C14/06C23C14/35
CPCB23K26/36C23C14/042C23C14/35C23C14/0641C23C14/0676
Inventor 车翰宣张雄哲陈昊
Owner SHANGHAI CHUANXIN SEMICON CO LTD
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