Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of confined growth ring and nitride crystal growth method for HVPE reaction furnace

A nitride crystal and crystal growth technology, applied in crystal growth, chemical instruments and methods, from chemically reactive gases, etc., can solve problems such as edge effects that cannot be solved by traditional methods, achieve curb edge effects, save production costs, Universal effect

Active Publication Date: 2022-02-11
PEKING UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the next-generation GaN bulk crystal growth technology, in order to achieve centimeter-thick GaN crystal growth, the problem of edge effects can no longer be solved by traditional methods, so it is urgent to develop a new technology to solve the problem of edge effects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of confined growth ring and nitride crystal growth method for HVPE reaction furnace
  • A kind of confined growth ring and nitride crystal growth method for HVPE reaction furnace
  • A kind of confined growth ring and nitride crystal growth method for HVPE reaction furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] In this embodiment, the through hole at the center of the growth-confined ring is circular, and the growth-confined ring is a complete circular ring.

[0039] Such as figure 1 As shown, the confinement growth ring of this embodiment is used in the nitride crystal growth method, including the following steps:

[0040] 1) Preparation of confined growth ring:

[0041] The powder metallurgy method is used to form tungsten with a purity higher than 99.95% into a bulk material, and then form a circular ring by mechanical processing to prepare a confined growth ring; a seed crystal used for the growth of gallium nitride crystals on the confined growth ring The ring surface parallel to the growth surface is the functional surface of the confined growth ring, and the functional surface of the confined growth ring is mechanically treated so that the surface roughness of the confined growth ring is 5 μm, and the performance of the functional surface of the confined growth ring is...

Embodiment 2

[0054] In this embodiment, the through hole in the center of the confined growth ring is an irregular polygon, such as image 3 Shown, others are the same as embodiment one.

Embodiment 3

[0056] In this embodiment, the confined growth ring includes a plurality of confined segments, each of which is a part of a circular ring, and the multiple confined segments are located in the same circular ring, and the distance between adjacent confined segments is 2 mm ,Such as Figure 4 Shown, others are the same as embodiment one.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a confined growth ring and a nitride crystal growth method for an HVPE reaction furnace. The present invention adopts one of tungsten, ruthenium and molybdenum, or adopts a carbide or nitride confinement growth ring of one of tungsten, ruthenium and molybdenum, and after cleaning, annealing and activation, the functional surface of the confinement growth ring It has chemical activity; the confined growth ring is placed in the growth area of ​​the reaction furnace. During the growth process, the confined growth ring restricts the lateral growth of the crystal, thereby preventing the edge growth of the crystal, preventing the edge effect during the growth process, and reducing the growth process. The stress generated in the process finally realizes centimeter-level GaN bulk crystal growth; the realization method of the present invention is simple, can be easily realized according to the existing technical level, and can be popularized in large quantities; the confined growth ring can be reused after thermal cleaning, saving the limited The production cost of the growth ring is economical and practical; the confined growth ring can be optimally designed according to the different structures of the growth regions of different HVPE reactors, and has strong versatility.

Description

technical field [0001] The invention relates to a nitride crystal growth technology, in particular to a confined growth ring used in a HVPE reaction furnace and a nitride crystal growth method. Background technique [0002] III-V nitride materials have good optical and electrical properties, making them of great application value in the fields of high-efficiency light-emitting devices, photoelectric conversion devices, power electronic devices, integrated circuits, and sensor devices. In recent years, nitride crystal growth technology has become the core of the strategic development of high-tech industries in various countries, and the hydride vapor phase epitaxy (HVPE) reactor is a common nitride (GaN) crystal growth equipment. In recent years, the growth technology of GaN free-standing substrates based on the HVPE method has become the mainstream technology for preparing commercial GaN free-standing substrates. In order to obtain GaN bulk crystals with a thickness of cent...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/40C30B25/02B23P15/00
CPCC30B29/406C30B25/02B23P15/00
Inventor 王新强刘强刘放盛博文
Owner PEKING UNIV