Silicon optical accelerometer based on MZI interference system and preparation method thereof
A technology of accelerometer and interference system, which is applied in the field of silicon optical accelerometer and its preparation based on MZI interference system, which can solve the problems of complex twisting interferometer and difficult process, and achieve the effect of strong anti-interference ability and high sensitivity
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Embodiment 1
[0065] This embodiment provides a kind of uniaxial silicon optical accelerometer based on MZI interferometric system, such as figure 1 and figure 2 shown, including:
[0066] The base layer 4 is made of silicon material;
[0067] The top layer 1 is arranged on the base layer 4;
[0068] A fixed anchor 3 is fixedly arranged on the base layer 4;
[0069] The MZI interference structure 2 is arranged on the top layer 1 and includes: an input end 21 and an output end 23, and a fixed waveguide 221 and a measurement waveguide 222 which are connected to the input end 21 and the output end 23 and arranged in parallel;
[0070] The mass 5 is connected to the measuring waveguide 222 at the top, one end is connected to the fixed anchor 3 through the first cantilever beam 61, and the other end is connected to the fixed anchor 3 through the second cantilever beam 62 located below the measuring waveguide 222, and the middle or bottom of the second cantilever beam 62 is Has an oxide laye...
Embodiment 2
[0087] This embodiment provides a method for preparing a uniaxial silicon optical accelerometer based on an MZI interference system, comprising the following steps:
[0088] S1: Take an SOI wafer, the SOI wafer includes a base layer 4, a top layer 1 and an oxide layer between the base layer 4 and the top layer 1;
[0089] S2: Etching is performed on the top layer 1 to form an MZI interference structure 2, the MZI interference structure 2 includes: an input end 21 and an output end 23, and a fixed waveguide 221 and a fixed waveguide 221 that is connected in parallel to the input end 21 and the output end 23 at the same time measuring waveguide 222;
[0090] S3: continue to etch the top layer 1, etch the cavity 81 around the mass block 5 and the first cantilever beam 61 to form the corresponding shapes of the mass block 5 and the first cantilever beam 61;
[0091] S4: Etch from the bottom of the base layer 4 at the position corresponding to the cavity to be etched around the ma...
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