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Main-grid-free heterojunction solar cell and prepared imbricated assembly thereof

A solar cell and heterojunction technology, applied in electrical components, circuits, photovoltaic power generation, etc., can solve the problems of high manufacturing cost, large consumption, and high cost of manufacturing equipment, and achieve the goal of reducing silver paste consumption and manufacturing cost Effect

Pending Publication Date: 2021-10-01
苏州卡睿杰新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A practical problem facing the large-scale industrialization of heterojunction solar cells is that the manufacturing cost is relatively high compared with the existing technology. In addition to the high cost of manufacturing equipment for heterojunction solar cells, the low-temperature silver paste used is high in cost and consumption. is also a major reason
Existing designs of heterojunction solar cell grid wires include two structures: fine grid and main grid. Interconnection, but the presence of both fine grids and bus grids increases the consumption of silver paste, resulting in high costs

Method used

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  • Main-grid-free heterojunction solar cell and prepared imbricated assembly thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0017] In this embodiment, a 166mm N-type silicon wafer is used as a substrate. First, the N-type silicon wafer is cleaned and textured, and finally the intrinsic layer and the doped layer are uniformly vacuum-deposited on both sides of the N-type silicon wafer by PECVD technology, and then Continue to deposit a transparent conductive passivation layer (TCO) on the surface of the doped layer. Finally, a screen printing machine was used to print 110 fine grids evenly distributed on the front surface of the cell, with a width of 35um and an interval of 1.5mm between the grid lines. 150 evenly distributed fine grids are printed on the back of the cell, the width of the thin grids is 30um, and the distance between the grid lines is 1.1mm. After the busbar-free heterojunction solar cell is prepared, the cell is cut according to the module layout design. In this example, the 166mm cell is vertically divided into 6 equal parts along the vertical thin grid line, and the edge of each s...

Embodiment 2

[0019] In this embodiment, a 188mm N-type silicon wafer is used as a substrate. First, the N-type silicon wafer is cleaned and textured, and finally the intrinsic layer and the doped layer are uniformly vacuum-deposited on both sides of the N-type silicon wafer by PECVD technology, and then Continue to deposit a transparent conductive passivation layer (TCO) on the surface of the doped layer. Finally, a screen printing machine was used to print 130 fine grids evenly distributed on the front surface of the cell, with a width of 40um and an interval of 1.45mm between the grid lines. 170 evenly distributed fine grids are printed on the back of the battery sheet, the width of the thin grids is 30um, and the distance between the grid lines is 1.1mm. After the busbar-free heterojunction solar cell is prepared, the cell is cut according to the module layout design. In this embodiment, the 188mm cell is vertically cut into 7 equal parts along the direction of the vertical thin grid li...

Embodiment 3

[0021] In this embodiment, a 210mm N-type silicon wafer is used as a substrate. First, the N-type silicon wafer is cleaned and textured, and finally the intrinsic layer and the doped layer are uniformly vacuum-deposited on both sides of the N-type silicon wafer by PECVD technology, and then Continue to deposit a transparent conductive passivation layer (TCO) on the surface of the doped layer. Finally, a screen printing machine was used to print 180 fine grids evenly distributed on the front surface of the battery sheet, the width of the thin grids was 35um, and the distance between the grid lines was 1.17mm. 210 evenly distributed fine grids are printed on the back of the cell, the width of the thin grids is 30um, and the distance between the grid lines is 1.0mm. After the busbar-free heterojunction solar cells are prepared, the cells are cut according to the module layout design. In this embodiment, the 210mm cells are vertically cut into 9 equal parts along the direction of ...

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Abstract

The invention relates to a main-grid-free heterojunction solar cell and a prepared imbricated assembly thereof, which are characterized in that the heterojunction solar cell only needs to print fine grid lines to collect current, and main grid lines of a traditional solar cell are not needed. Current collection of the main-grid-free heterojunction solar cell and interconnection between battery pieces are completed through the conductive adhesive located between the solar battery pieces when the imbricate assembly is prepared, so that the silver paste consumption of the heterojunction solar battery is reduced, and the cost of the imbricate assembly is greatly reduced.

Description

technical field [0001] The invention relates to the field of solar cells and components, in particular to a busbar-free heterojunction solar cell and a shingled component prepared therefrom. Background technique [0002] The conversion efficiency of solar cells has always been the core issue in the development of photovoltaic industry technology. The conversion efficiency of heterojunction solar cells is high, the production process is relatively simple, the process temperature is low, and it can adapt to thinning. It is considered by the industry to be the next generation of solar cell technology. A practical problem facing the large-scale industrialization of heterojunction solar cells is that the manufacturing cost is relatively high compared with the existing technology. In addition to the high cost of manufacturing equipment for heterojunction solar cells, the low-temperature silver paste used is high in cost and consumption. Also a major reason. Existing designs of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/05
CPCH01L31/022425H01L31/0504Y02E10/50
Inventor 孙玉海宋艳
Owner 苏州卡睿杰新材料科技有限公司