Semiconductor structure and forming method thereof

Abstract

The invention provides a semiconductor structure and a forming method thereof. The semiconductor structure comprises a semiconductor substrate, a gate structure, a source region and a drain region, wherein the semiconductor substrate comprises a well region, and a first drift region and a first isolation structure located in the first drift region are formed in the well region; the gate structure is located on the semiconductor substrate between the first isolation structures and comprises a gate dielectric layer, a barrier layer, a gate and side walls, the gate dielectric layer, the barrier layer and the gate are sequentially located on the semiconductor substrate, and the side walls are located on the two sides of the gate dielectric layer, the barrier layer and the gate, the gate comprises polycrystalline silicon layers and work function metal layers which are alternately arranged along the length direction of the channel; and the source region and the drain region are positioned in the first drift region on two sides of the gate structure. The gate comprises polycrystalline silicon layers and work function metal layers which are alternately arranged in the length direction of a channel, the gate with the structure can reduce gate square resistance, and therefore the performance of a semiconductor device is improved.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a semiconductor structure and a method for forming the same. Background technique [0002] At present, semiconductor technology has penetrated into various fields of life, such as aerospace, medical equipment, mobile communication, artificial intelligence and other aspects are inseparable from semiconductor electronic devices (Semiconductor Electronic Device), which utilizes the special electrical properties of semiconductor materials, adopts Different processes and geometries to achieve specific functions can be used to generate, control, send and receive, transform, amplify and reduce signals, and perform energy conversion. In a semiconductor integrated circuit (IC), a variety of semiconductor devices are generally included, such as high-voltage semiconductor devices and low-voltage semiconductor devices. The advantage of high-voltage semiconductor devices is ...

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Problems solved by technology

[0004] Aiming at the problem of high gate delay caused by high gate resistance in some high-voltage semiconductor devices, the present application provides a semiconductor structure and a forming method thereof, the gate of which includes polysilicon layers (Polysilicon layers) -Si) and the work function metal layer, the gate of this structure can reduce the gate sheet resistance (RS, Sheet Resistance), thereby improving the performance of semiconductor devices

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