Method for preparing metal nanowire array on the basis of interface reaction and solid-state phase change

A metal nanowire, solid-state phase transition technology, applied in the field of preparation of metal nanowire arrays, can solve the problems of low efficiency, high cost, complex preparation process of metal nanowire arrays, etc., and achieves easy collection, less aggregation, and universality. sexual effect

Pending Publication Date: 2021-10-22
HARBIN UNIV OF SCI & TECH
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  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention provides a method for preparing a metal nanowire array based on interface reaction and solid-state phase tr

Method used

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  • Method for preparing metal nanowire array on the basis of interface reaction and solid-state phase change
  • Method for preparing metal nanowire array on the basis of interface reaction and solid-state phase change
  • Method for preparing metal nanowire array on the basis of interface reaction and solid-state phase change

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Example Embodiment

[0055] In the specific implementation process, the present invention Al 12 Mg 17 The preparation method of the nanowire array, first, the aluminum alloy substrate is cleaned; second, the MGZN base alloy is tightly in contact with the substrate; again, the metal nanowire array grows in the aluminum-alloy substrate by reactive diffusion. Inside; Finally, the surface drum bag is removed. The method specifically includes the following steps:

[0056] First, clean the surface of the substrate;

[0057] Second, the MgZN base alloy is a cladding material, and the MGZN base alloy is closely contacted with the substrate as a diffusion, and the reaction diffusion system is established.

[0058] Third, the method of constant temperature heating is used, and the growth of the intermetallic compound is performed in the reaction diffusion system established in step II, and the solid state phase change process is exceeded according to the grain alignment in the substrate to regulate the growth d...

Example Embodiment

[0061] Example 1:

[0062] In this embodiment, Al is prepared 12 Mg 17 Nanoire array: Cleaning aluminum substrate with ethanol at ultrasonic cleaning machine, cleaning time is 5 min. The MgZn alloy is melted as a cladding material, which makes it closely contact with the metal AL plate by a hot tapered method. After contact, the MgZn molten layer and the metal AL plate are integrated as a diffusion, and the cover is used as a protective measures. The phase change process, the temperature is 450 ° C, the time is 5 min. After the reactive diffusion dipward is taken out, the sandpaper grinding method is used for machining, and the metal AL plate surface drum is removed from the direction of directional growth. 12 Mg 17 Nano-line arrays, its technical parameters and performance indicators are as follows: the wire diameter is 150 ~ 200 nm, the spacing is 200 ~ 300 nm, and the length is 4 to 6 μm.

[0063] like figure 1 As shown, the nanowire array growth is shown. figure 1 It can be se...

Example Embodiment

[0066] Example 2:

[0067] In this embodiment, Al is prepared 12 Mg 17 Nanoire array: Cleaning aluminum substrate with ethanol at ultrasonic cleaning machine, cleaning time is 5 min. Sollow a highly eutecticated MgZn alloy as a cladding material, which makes it closely contact with the metal AL plate by a hot tapered method. After contact, the MgZn molten coating layer and the metal AL plate are integrated as a diffusion, to cover As the protective measures, the solid state phase change process is carried out, the temperature is 460 ° C, and the time is 5 min. After the reactive diffusion dipward is taken out, the sandpaper grinding method is used for machining, and the metal AL plate surface drum is removed from the direction of directional growth. 12 Mg 17 Nano-line arrays, its technical parameters and performance indicators are as follows: the wire diameter is 150 ~ 200 nm, the spacing is 200 ~ 300 nm, and the length is 4 to 6 μm.

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Abstract

The invention belongs to the technical field of preparation of one-dimensional nano materials, and particularly relates to a method for preparing a metal nanowire array on the basis of interface reaction and solid-state phase change. The method for preparing the metal nanowire array on the basis of interface reaction and solid-state phase change comprises the following steps of: firstly, cleaning a substrate; secondly, enabling a low-melting-point alloy as a cladding material to be in close contact with the substrate; thirdly, enabling the metal nanowire array to grow in the substrate through a reaction diffusion method; and fourthly, removing bumps on the surface of the substrate to obtain the metal nanowire array embedded in the substrate. The method for preparing the metal nanowire array on the basis of interface reaction and solid-state phase change has the advantages that (1) the cost is low, the reaction time is short, and the operation is simple and effective; (2) the metal nanowire prepared by the method possesses high orientation, orderliness and uniform length; and (3) the method possesses universality, the preferred orientation of substrate crystal grains can be selectively changed, the growth direction and the growth area of the nanowires can be controlled, and the metal nanowire array is expected to be attached in the substrate in a large range.

Description

technical field [0001] The invention belongs to the technical field of preparation of one-dimensional nanometer materials, in particular to a method for preparing a metal nanowire array based on interface reaction and solid-state phase transition. Background technique [0002] Nanomaterials are now a hot research direction in the field of materials. One-dimensional nanomaterials such as nanowires and nanorods can play an important role in the fields of sensors, catalysis, and energy. Among them, metal nanowires have unique electrical, magnetic and transport properties, and have broad application prospects in optoelectronic devices and other fields. Common methods for preparing metal nanowires mainly include chemical vapor deposition, template method, and solvothermal method. Chemical vapor deposition is a process of controlling the nucleation and growth of nanomaterials by controlling parameters such as pressure, gas flow rate, and substrate temperature by using gas-phase c...

Claims

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Application Information

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IPC IPC(8): B22F1/00B22F9/04C22C23/02C23C26/02B82Y30/00B82Y40/00
CPCC23C26/02B22F9/04C22C23/02B82Y30/00B82Y40/00
Inventor 王敬泽翁冠军常晶苏云龙尹佳庆
Owner HARBIN UNIV OF SCI & TECH
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