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Surface treatment process for power chip before feeding

A processing technology and power chip technology, applied in the field of surface treatment technology before power chip feeding, can solve the problems of inability to improve the surface contact force of silicon wafers, complicated operation of the processing method, etc., and achieve improved surface contact force, simple operation method and uniform structure. Effect

Pending Publication Date: 2021-10-22
江苏晟驰微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Silicon wafers need to be pretreated on the surface before processing. The existing treatment methods are complicated to operate and cannot improve the surface contact force of silicon wafers. Therefore, it is necessary to improve

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] The present invention provides the following technical solutions: a surface treatment process for power chips before feeding, comprising the following steps:

[0019] A. First, clean the surface of the silicon wafer to remove impurities and oil, and then dry it;

[0020] B. Put the dried silicon wafer into the alkaline etching solution to corrode the surface pyramid;

[0021] C, the silicon wafer after alkali solution corrosion in the step B adopts deionized water to rinse clean and dry;

[0022] D. Then put the dried silicon chip into the acid etching solution to correct the surface of the silicon chip after alkali corrosion, and further react and correct the impurities produced after alkali corrosion, so that the structure of the pyramid is more uniform.

[0023] In this embodiment, the components of the alkaline corrosion solution in Step B include 5 parts by mass of sodium chlorate, 2 parts of sodium hydroxide and 30 parts of water.

[0024] In this embodiment, th...

Embodiment 2

[0029] A surface treatment process for power chips before feeding, comprising the following steps:

[0030] A. First, clean the surface of the silicon wafer to remove impurities and oil, and then dry it;

[0031] B. Put the dried silicon wafer into the alkaline etching solution to corrode the surface pyramid;

[0032] C, the silicon wafer after alkali solution corrosion in the step B adopts deionized water to rinse clean and dry;

[0033] D. Then put the dried silicon chip into the acid etching solution to correct the surface of the silicon chip after alkali corrosion, and further react and correct the impurities produced after alkali corrosion, so that the structure of the pyramid is more uniform.

[0034] In this embodiment, the components of the alkaline corrosion solution in Step B include 8 parts by mass of sodium chlorate, 6 parts of sodium hydroxide and 40 parts of water.

[0035] In this embodiment, the components of the acid etching solution in step D include 3 part...

Embodiment 3

[0040] A surface treatment process for power chips before feeding, comprising the following steps:

[0041] A. First, clean the surface of the silicon wafer to remove impurities and oil, and then dry it;

[0042] B. Put the dried silicon wafer into the alkaline etching solution to corrode the surface pyramid;

[0043] C, the silicon wafer after alkali solution corrosion in the step B adopts deionized water to rinse clean and dry;

[0044] D. Then put the dried silicon chip into the acid etching solution to correct the surface of the silicon chip after alkali corrosion, and further react and correct the impurities produced after alkali corrosion, so that the structure of the pyramid is more uniform.

[0045] In this embodiment, the components of the caustic solution in Step B include 6 parts by mass of sodium chlorate, 3 parts of sodium hydroxide and 32 parts of water.

[0046] In this embodiment, the components of the acid etching solution in step D include 1 part of hydrofl...

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Abstract

The invention discloses a surface treatment process for a power chip before feeding, which comprises the following steps of A, firstly, cleaning the surface of a silicon wafer to remove impurities and oil stains, and then airing, B, putting the aired silicon wafer into an alkaline corrosive liquid to corrode a surface pyramid, C, washing the silicon wafer corroded by the alkali liquor in the step B with deionized water, and airing the silicon wafer, and D, putting the aired silicon wafer into an acidic corrosive liquid to carry out correction treatment on the surface of the silicon wafer subjected to alkali corrosion, and further conducting reaction correction on impurities generated after alkali corrosion, so that the structure of the pyramid tower is more uniform,. The operation method is simple, and the surface of the treated silicon wafer can be more easily diffused, doped and contacted with a surface electrode.

Description

technical field [0001] The invention relates to the technical field of silicon wafer surface treatment, in particular to a surface treatment process for power chips before feeding. Background technique [0002] Wafer thickness is also a factor affecting productivity as it relates to the number of wafers produced per block. Ultra-thin silicon wafers present additional challenges for wire saw technology, since their production is much more difficult. In addition to the mechanical fragility of silicon wafers, microscopic cracks and warps can negatively impact product yield if the wire sawing process is not precisely controlled. An ultra-thin wafer wire saw system must allow precise control of process linearity, cutting wire speed and pressure, and cutting coolant. Manufacturers of crystalline silicon photovoltaic cells place extremely high demands on the quality of silicon wafers, regardless of their thickness. Silicon wafers should not have surface damage (fine cracks, wire...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/18
CPCH01L21/02019H01L31/1804H01L21/02043Y02P70/50
Inventor 崔文荣
Owner 江苏晟驰微电子有限公司