Vertical cavity surface emitting laser with semi-annular symmetrical electrode structure

A technology of vertical cavity surface emission and symmetrical electrodes, which is applied in the field of optoelectronics, can solve the problems of no selection mechanism of polarization direction, unfixed polarization direction, and polarization instability, and achieve good interface flatness, stable polarization state, and improved performance. Effect
CN113540971AInactive Publication Date: 2021-10-22中科启迪光电子科技(广州)有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
中科启迪光电子科技(广州)有限公司
Publication Date
2021-10-22
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a vertical cavity surface emitting laser with a semi-annular symmetrical electrode structure. A resonant cavity of the cylindrical vertical cavity surface emitting laser is etched out jointly by a lower DBR, an active region, an oxidation limiting layer, an upper DBR and a P-type metal ohmic contact layer. The left side of the vertical cavity surface emitting laser is plated with a P-type electrode, the right side of the resonant cavity of the vertical cavity surface emitting laser is provided with an N-type electrode, and the N-type electrode is plated above an N-type metal ohmic contact layer. The resonant cavity of the vertical cavity surface emitting laser is coated by a BCB layer, an electrode window is etched on the BCB layer by utilizing RIE, and a GSG-Pad electrode is grown on the BCB layer through magnetron sputtering to realize a coplanar electrode structure. According to the invention, a non-uniform current is injected into the vertical cavity surface emitting laser by utilizing a semi-circular ring symmetrical electrode structure, and non-uniform loss is introduced into the resonant cavity by utilizing different migration rates of electrons and holes, so that the gain of an output mode of the laser is anisotropic, the polarization state stable, and the performance of the laser is improved.
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Description

technical field

[0001] The invention belongs to the technical field of optoelectronics, and in particular relates to a vertical cavity surface-emitting laser with a semi-ring symmetrical electrode structure. Background technique

[0002] Vertical-cavity surface-emitting lasers (VCSEL for short) are an important member of the semiconductor laser family. VCSELs have the advantages of small size, good single-mode characteristics, low threshold current, and circular spot output. Large-scale applications in the fields of communication, lighting and sensing. In recent years, a chip scale atomic clock (CSAC) based on VCSEL and micro-electromechanical system (MEMS) technology has become an important development direction of atomic frequency standard technology. VCSEL is the core component of chip-level atomic clocks. Lasers with good single-mode characteristics, stable operation at high temperatures, stable linear polarization, narrow linewidth, and long life are the key technologi...

Claims

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