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Vertical cavity surface emitting laser with semi-annular symmetrical electrode structure

A technology of vertical cavity surface emission and symmetrical electrodes, which is applied in the field of optoelectronics, can solve the problems of no selection mechanism of polarization direction, unfixed polarization direction, and polarization instability, and achieve good interface flatness, stable polarization state, and improved performance. Effect

Inactive Publication Date: 2021-10-22
中科启迪光电子科技(广州)有限公司
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  • Claims
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Problems solved by technology

But the polarization of the lasing light of most VCSELs is inherently unstable, because the resonator and gain medium of the laser are quasi-isotropic in all planes of the active layer, and there is no strong selection mechanism inside the VCSEL to To determine a specific polarization direction, the polarization direction of the light output by the laser is not fixed, but for chip-scale atomic clocks, stable linear polarization is an indispensable condition

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  • Vertical cavity surface emitting laser with semi-annular symmetrical electrode structure
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  • Vertical cavity surface emitting laser with semi-annular symmetrical electrode structure

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Embodiment Construction

[0022] The implementation mode of the present invention is illustrated by specific specific examples below, and those who are familiar with this technology can easily understand other advantages and effects of the present invention from the contents disclosed in this description. Obviously, the described embodiments are a part of the present invention. , but not all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0023] see figure 1 , figure 2 and image 3 , the embodiment of the present invention provides a vertical cavity surface-emitting laser with a semi-ring symmetrical electrode structure, including a GaAs-based substrate 1, an N-type metal ohmic contact layer 2, a lower layer DBR3, an active region 4, and an upper layer DBR5 arranged in sequence from bottom to top and P-type metal ohmic contact...

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Abstract

The invention discloses a vertical cavity surface emitting laser with a semi-annular symmetrical electrode structure. A resonant cavity of the cylindrical vertical cavity surface emitting laser is etched out jointly by a lower DBR, an active region, an oxidation limiting layer, an upper DBR and a P-type metal ohmic contact layer. The left side of the vertical cavity surface emitting laser is plated with a P-type electrode, the right side of the resonant cavity of the vertical cavity surface emitting laser is provided with an N-type electrode, and the N-type electrode is plated above an N-type metal ohmic contact layer. The resonant cavity of the vertical cavity surface emitting laser is coated by a BCB layer, an electrode window is etched on the BCB layer by utilizing RIE, and a GSG-Pad electrode is grown on the BCB layer through magnetron sputtering to realize a coplanar electrode structure. According to the invention, a non-uniform current is injected into the vertical cavity surface emitting laser by utilizing a semi-circular ring symmetrical electrode structure, and non-uniform loss is introduced into the resonant cavity by utilizing different migration rates of electrons and holes, so that the gain of an output mode of the laser is anisotropic, the polarization state stable, and the performance of the laser is improved.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, and in particular relates to a vertical cavity surface-emitting laser with a semi-ring symmetrical electrode structure. Background technique [0002] Vertical-cavity surface-emitting lasers (VCSEL for short) are an important member of the semiconductor laser family. VCSELs have the advantages of small size, good single-mode characteristics, low threshold current, and circular spot output. Large-scale applications in the fields of communication, lighting and sensing. In recent years, a chip scale atomic clock (CSAC) based on VCSEL and micro-electromechanical system (MEMS) technology has become an important development direction of atomic frequency standard technology. VCSEL is the core component of chip-level atomic clocks. Lasers with good single-mode characteristics, stable operation at high temperatures, stable linear polarization, narrow linewidth, and long life are the key technologi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/042H01S5/028H01S5/183
CPCH01S5/18344H01S5/04254H01S5/028H01S5/0283
Inventor 孟红玲贾晓卫
Owner 中科启迪光电子科技(广州)有限公司
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