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Doping device and method for czochralski silicon single crystal

A technology of Czochralski silicon and single crystal, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of high pollution in the furnace, low doping rate of arsenic and phosphorus, high resistivity of silicon single crystal, etc. , to avoid bubbling, increase doping rate, and reduce volatilization

Active Publication Date: 2021-10-26
宁夏中欣晶圆半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, it is necessary to provide a doping device and method for Czochralski silicon single crystal to solve the problems of low arsenic and phosphorus doping rate, high pollution in the furnace, and high resistivity of silicon single crystal

Method used

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  • Doping device and method for czochralski silicon single crystal
  • Doping device and method for czochralski silicon single crystal
  • Doping device and method for czochralski silicon single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Pulling N-type 6-inch arsenic-doped single crystal, the polysilicon feed rate is 60kg, and the crystal orientation is .

[0053] Put 60kg of silicon raw material in the quartz crucible 210 for compounding. After the compounding is completed, set the temperature in the single crystal furnace 200 to 1280°C, and the argon flow in the single crystal furnace 200 is constant at 75L / min, keeping the temperature in the single crystal furnace 200 Furnace pressure is 20Kpa, stable under this parameter for half an hour, put 410g of arsenic in the quartz cup 130, hang the quartz cup 130 on the hook 1142 of the second quartz cover 114, cover the second quartz cover 114, row Gas piece 116, the first quartz cover 113, the whole doping part 100 is lowered vertically to the lower end of the immersion tube 112 and enters 20mm below the silicon melt liquid level for doping, and observes the volatilization of arsenic in the quartz cup 130. After the arsenic volatilizes completely, the dopi...

Embodiment 2

[0059] Pulling N-type 6-inch arsenic-doped single crystal, the polysilicon feed rate is 60kg, and the crystal orientation is .

[0060] Put 60kg of silicon raw material in the quartz crucible 210 for compounding. After the compounding is completed, set the temperature in the single crystal furnace 200 to 1320°C, and the flow rate of argon in the single crystal furnace 200 is constant at 85L / min, keeping the temperature in the single crystal furnace 200 Furnace pressure is 30Kpa, stable under this parameter for half an hour, put 410g of arsenic in the quartz cup 130, hang the quartz cup 130 on the hook 1142 of the second quartz cover 114, cover the second quartz cover 114 successively, row Gas piece 116, the first quartz cover 113, the whole doping part 100 is lowered in the vertical direction to the lower end of the immersion tube 112 and enters 30mm below the silicon melt liquid level for doping, and observes the volatilization of arsenic in the quartz cup 130. After the arse...

Embodiment 3

[0066] Pulling N-type 6-inch phosphorous-doped single crystal, the feeding amount is 60kg, and the pulling crystal orientation is .

[0067] Put 60kg of silicon raw material in the quartz crucible 210 for compounding. After the compounding is completed, set the temperature in the single crystal furnace 200 to 1280°C, and the argon flow in the single crystal furnace 200 is constant at 75L / min, keeping the temperature in the single crystal furnace 200 Furnace pressure is 20Kpa, stable under this parameter for half an hour, put 200g of phosphorus in the quartz cup 130, hang the quartz cup 130 on the hook of the second quartz cover 114, cover the second quartz cover 114 successively, exhaust Plate 116, the first quartz cover 113, the whole doping part 100 is lowered to the lower end of the immersion tube 112 in the vertical direction and enters 20 mm below the silicon melt liquid level for doping, and observes the volatilization of phosphorus in the quartz cup 130. After the volat...

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Abstract

The invention relates to a doping device and method for czochralski silicon single crystal, which belong to the technical field of equipment for producing monocrystalline silicon through a czochralski method. The doping device comprises a quartz inner container, a quartz bell jar and a quartz cup, the quartz inner container is arranged in the quartz bell jar, the quartz cup is arranged in the quartz inner container, and the upper end of an inner container body is sequentially covered with a first quartz cover and a second quartz cover from top to bottom; an exhaust cavity is formed between the first quartz cover and the second quartz cover, a first vent hole is formed in the second quartz cover, a pressure regulating pipe is vertically installed on the first vent hole, the exhaust piece covers the first vent hole, a second vent hole is formed in the annular wall of the inner container body, and the second vent hole is located between the first quartz cover and the second quartz cover. In the doping process, the pressure in the quartz inner container can be adjusted through the exhaust sheet, the pressure adjusting pipe and the vent hole, the bubbling phenomenon is avoided, volatilization of the dopant is reduced, the gasified dopant is fully fused into silicon melt for doping, the doping rate is increased, and pollution in the furnace is reduced.

Description

technical field [0001] The invention belongs to the technical field of equipment for producing single crystal silicon by Czochralski method, and in particular relates to a doping device and method for Czochralski silicon single crystal. Background technique [0002] Heavily doped silicon single wafer is the most ideal epitaxial substrate material, which is widely used in integrated circuits and high-end power devices. The market demand is also increasing, especially the requirements for resistivity. At present, the doping method of arsenic and phosphorus N-type silicon single crystal mainly adopts gas phase volatilization. [0003] Chinese patent CN1289722C discloses a doping method and its doping funnel for the manufacture of heavily doped Czochralski silicon single crystal. The method adopted is to put dopant phosphorus and arsenic in the doping funnel and lower the funnel to the lower part of the funnel The funnel mouth of the funnel is immersed in the liquid surface to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/04C30B15/20C30B29/06
CPCC30B15/04C30B15/20C30B29/06
Inventor 刘进王忠保李巨晓芮阳魏兴彤马小龙虎永慧
Owner 宁夏中欣晶圆半导体科技有限公司
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