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Improved device for producing zinc selenide by PVD method and production method

A technology of zinc selenide and tube cover, which is applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve the problems of high cost, long cycle of zinc selenide, flammable gas, etc., to solve the problem of inconsistent thickness and improve Material utilization rate, the effect of ensuring safety and reliability

Pending Publication Date: 2021-10-29
NANJING WAVELENGTH OPTO ELECTRONICS SCI & TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When using the CVD method to produce zinc selenide polycrystalline, the used hydrogen selenide (H 2 Se) gas is flammable and highly toxic, and the by-product hydrogen (H 2 ) and unreacted hydrogen selenide (H 2 Se) gas, hydrogen (H 2 ) is a flammable, explosive, colorless and odorless dangerous gas, and the CVD method has a long period of production of zinc selenide and is expensive. The traditional physical vapor deposition method (PVD) produces zinc selenide polycrystalline sheets, which are limited. Due to the deposition mold and raw material purity, it is impossible to obtain a sheet with uniform thickness and consistent penetration

Method used

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  • Improved device for producing zinc selenide by PVD method and production method
  • Improved device for producing zinc selenide by PVD method and production method
  • Improved device for producing zinc selenide by PVD method and production method

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Embodiment 1

[0045] Such as figure 1 As shown, an improved device for producing zinc selenide by PVD method, including evaporation deposition system 1 and vacuum system 2;

[0046] The evaporative deposition system 1 includes a thermal insulation shell 11 and a quartz tube cover 15;

[0047] The inner side of the thermal insulation shell 11 is divided into an evaporation zone 12 and a deposition zone 13 along the axial direction;

[0048] The quartz tube cover 15 is located inside the thermal insulation shell 11, and the inside of the quartz tube cover 15 located in the evaporation area 12 is provided with a material holding assembly 121. 121B divides the inner side of the material bottle 121A into two cavities, the inner cavity and the outer cavity respectively. The end of the outer cavity is provided with an opening, and the opening faces the deposition area 13. The setting of the filter pad 121B can reduce the evaporation and sublimation of the material bottle 121A. Dust and other imp...

Embodiment 2

[0051] On the basis of Embodiment 1, the following improvements are further made: the crucible 121A is a quartz glass bottle, and the filter pad 121B is made of ceramic fiber cotton. 2. The guide pipe 21 in the vacuum system 2 includes a three-way joint, one end of the three-way joint is connected to the vacuum gauge 23 , one end is connected to the pre-pumping valve 24 , and the other end is connected to the main pumping valve 26 . That is, a three-way interface is used to connect the pre-pump valve 24 and the main pump valve 26 after the vacuum gauge 23 .

Embodiment 3

[0053] On the basis of Embodiment 2, the following improvements are further made: the deposition mold 131 is positioned in the quartz tube cover 15 through the positioning clip 133 .

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Abstract

The invention discloses an improved device for producing zinc selenide by a PVD method and production method, and the improved device for producing the zinc selenide by the PVD method comprises an evaporation deposition system and a vacuum system, the evaporation deposition system comprises a heat preservation shell and a quartz tube cover; the inner side of the heat preservation shell is divided into an evaporation area and a deposition area in the axial direction; the quartz tube cover is positioned on the inner side of the heat preservation shell; a material containing assembly is arranged on the inner side of the quartz tube cover in the evaporation area; a deposition mold is arranged on the inner side of the quartz tube cover in the deposition area; an evaporation heater is arranged between the outer side of the quartz tube cover and the inner side of the evaporation area; a deposition heater is arranged between the outer side of the quartz tube cover and the inner side of the deposition area; a heat insulation layer is arranged between the evaporation heater and the deposition heater; and the end part of the quartz tube cover in the deposition area extends out of the heat preservation shell and is communicated with the vacuum system. According to the device, the large-size uniform-thickness zinc selenide polycrystalline plate is prepared by utilizing the principle of the PVD method, the material utilization rate is improved, and the problem that the thicknesses of the two ends of most zinc selenide plates produced by the PVD method are inconsistent is solved.

Description

technical field [0001] The invention relates to an improved device and a production method for producing zinc selenide by a PVD method, and belongs to the technical field of zinc selenide production devices. Background technique [0002] Zinc selenide polycrystalline material is a high-quality infrared window material developed in the late 1970s. It has the advantages of wide light transmission range (0.5-22μm) and low absorption coefficient. It is a high-power CO 2 Preferred window material for lasers and thermal imaging cameras. The growth of polycrystalline zinc selenide mainly uses chemical vapor deposition (CVD) and physical vapor deposition (PVD). 2 Se) gas (or selenium vapor) as raw material gas, with hydrogen (H 2 ) is the carrier gas, a chemical reaction occurs at a temperature of 650-750 ° C, and zinc selenide block crystals are formed on the graphite deposition plate. When using the CVD method to produce zinc selenide polycrystalline, the used hydrogen selenide...

Claims

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Application Information

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IPC IPC(8): C30B28/12C30B29/48
CPCC30B28/12C30B29/48
Inventor 杨锦春王劲吴玉堂朱敏
Owner NANJING WAVELENGTH OPTO ELECTRONICS SCI & TECH CO LTD
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