Method for segmenting SiC slice by laser scribing
A technology of laser scribing and thin slices, which is applied in the manufacture of electrical components, electric solid devices, semiconductor/solid devices, etc. It can solve the problems of difficult reapplicability of thick slices, achieve high scribing efficiency, less die loss, and cutting times little effect
Pending Publication Date: 2021-10-29
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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Problems solved by technology
However, when the SiC substrate is thinned to about 100um, it is difficult to apply the scribing method used for thick slices. It is necessary to find a new scribing method so that SiC thin slices can be quickly divided into individual dies and the scribing process chip less loss
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[0020] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0021] figure 1 The general flow chart of the method for dividing SiC flakes of the present invention comprises the following steps:
[0022] In step 1, attach a SiC sheet with a thickness of 80 μm to 120 μm to the scribing film, the back of the sheet is in close contact with the scribing film, and the scribing film is tightly positioned on the scribing frame.
[0023] Step 2: Carry out invisible laser cutting along each scribing lane on the front side of the SiC sheet, generate laser explosion points inside the SiC sheet, and connect the laser explosion points under stress, and generate penetrating micro-cracks inside the SiC, and the micro-cracks extend to SiC Cracks form on the front side of the flake.
[0024] The wavelength of the laser is 800nm-1200nm, the pulse frequency is 10kHz-30kHz, and the scanning speed of the laser is ...
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Abstract
The invention discloses a method for segmenting a SiC slice by laser scribing. The method comprises the following steps of (1) pasting the SiC slice on a scribing film, enabling the back surface of the slice to be in close contact with the scribing film, and tightening the scribing film and positioning the scribing film on a scribing frame; (2) carrying out laser stealth cutting on the front face of the SiC slice along each scribing channel; generating laser explosion points in the SiC slice, connecting the laser explosion points under the action of stress, generating the through micro-cracks in SiC, enabling the micro-cracks to extend to the front face of the SiC slice to form cracks; and (3) cracking the SiC slice, so that the SiC slice is separated along the crack direction and is divided into independent tube cores. According to the invention, rapid scribing of the SiC slice can be realized by using laser scribing, and the scribing effect is good, the edge breakage rate is low, and the number of damaged tube cores is small.
Description
technical field [0001] The invention relates to a method for dividing SiC thin slices, in particular to a method for dividing SiC thin slices by laser scribing. Background technique [0002] SiC is a third-generation new wide-bandgap semiconductor material with excellent physical, chemical and electrical properties. It has a good application prospect in the field of power semiconductor devices, especially under high-power and high-voltage conditions. Both SiC Schottky barrier diodes (SBDs) and SiC MOSFETs have been successfully commercialized. [0003] The substrate thickness of traditional SiC products is about 350um. For the final product, the resistance generated by the substrate accounts for a large part of the total resistance of the product. Therefore, thinning the SiC substrate to obtain higher performance is the current research trend. However, when the SiC substrate is thinned to about 100um, it is difficult to apply the scribing method used for thick slices. It i...
Claims
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IPC IPC(8): H01L21/78H01L21/268H01L21/683
CPCH01L21/78H01L21/6836H01L21/268H01L2221/68327
Inventor 钱志成张宏伟费晨曦张阳
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD