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A kind of semiconductor device with narrow line width and preparation method thereof

A semiconductor and narrow line width technology, applied in the field of narrow line width semiconductor devices and their preparation, can solve the problems of simple structure, inability to take into account the line width and high integration degree at the same time with light

Active Publication Date: 2021-12-14
SUZHOU EVERBRIGHT PHOTONICS CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the problem that the light emitted by the semiconductor device in the prior art cannot simultaneously take into account the narrow line width, simple structure and high integration.

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  • A kind of semiconductor device with narrow line width and preparation method thereof
  • A kind of semiconductor device with narrow line width and preparation method thereof
  • A kind of semiconductor device with narrow line width and preparation method thereof

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Embodiment Construction

[0024] At present, the methods to realize semiconductor devices with low spectral linewidth mainly include external cavity modulation feedback, device integration grating and other methods. For the external cavity feedback modulation method, the integration degree of the device is reduced due to the external cavity part; for the method of device integrated grating, the structure of the grating is complex, so the grating preparation process is more complicated, and it is difficult to improve the yield and efficiency of production.

[0025] In recent years, topological photonics is a rapidly emerging research field, which uses geometric and topological ideas to design and control the behavior of light. This patent uses topological defect states and Fano resonance to design a semiconductor device with a narrow line width. This design can be realized only by growing layers with high and low refractive indices, while taking into account narrow line width, simple structure, and high ...

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Abstract

A semiconductor device with a narrow line width and a manufacturing method thereof, wherein the semiconductor device with a narrow line width includes: a substrate layer; a gain structure located on the substrate layer; a part of the gain structure located on the side facing away from the substrate layer The line width modulation layer; the line width modulation layer includes: a transmission unit, the transmission unit includes a first periodic composite film, and a second period located on the surface of the first periodic composite film facing away from the gain structure Composite film; a defect layer located on the side of the transmission unit facing away from the gain structure; a third period composite film located on the side of the defect layer facing away from the gain structure; the second period composite film, defect layer and the third periodic composite film form a resonant cavity. The line width of light emitted by the semiconductor device with narrow line width is effectively narrowed, and the structure is simple and the integration degree is high.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor device with a narrow line width and a preparation method thereof. Background technique [0002] A light-emitting semiconductor device is a device that produces stimulated emission with a certain semiconductor material as a working substance. Its working principle is: through a certain excitation method, between the energy band (conduction band and valence band) of the semiconductor material, or Between the energy band of the material and the energy level of the impurity (acceptor or donor), the particle number inversion of the non-equilibrium carrier is realized. When a large number of electrons and holes in the particle number inversion state recombine, stimulated emission occurs Because of its small size and high electro-optical conversion efficiency, light-emitting semiconductor devices are widely used. [0003] In some high-precision quantum detection fields, li...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/125H01S5/183
CPCH01S5/125H01S5/18302
Inventor 王俊肖垚赵润刘恒苗霈胡燚文李波肖啸廖新胜
Owner SUZHOU EVERBRIGHT PHOTONICS CO LTD
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